Alpha & Omega Semiconductor AO4604 Service Manual
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AO4604
Complementary Enhancement Mode Field Effect Transistor
Nov 2002
General Description
Features
n-channel p-channel
The AO4604 uses advanced trench
technology MOSFETs to provide excellen
R
and low gate charge. The
DS(ON)
complementary MOSFETs may be used
in power inverters, and other applications.
8
1
S2
G2
S1
G1
2
3
4
D2
7
D2
6
D1
5
D1
(V) = 30V -30V
V
DS
I
= 6.9A -5A
D
R
DS(ON) RDS(ON)
< 28mΩ (VGS=10V) < 52mΩ (VGS = 10V)
< 42mΩ (V
=4.5V) < 87mΩ (VGS = 4.5V)
GS
D2
G2
S2
SOIC-8
n-channel
Absolute Maximum Ratings T
Parameter Max n-channel
Drain-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
TA=25°C
TA=70°C
B
T
=25°C
A
=70°CPower Dissipation
T
A
Junction and Storage Temperature Range
=25°C unless otherwise noted
A
Symbol Max p-channel Units
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
30 -30
±20Gate-Source Voltage
6.9
5.8
30
2
1.44
G1
p-channel
D1
S1
-55 to 150-55 to 150
±20
-5
-4.2
-20
2
1.44
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
A
A
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
Symbol Device Typ Max Units
R
θJA
R
θJL
R
θJA
R
θJL
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
n-ch 35 40 °C/W
p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
p-ch 35 40 °C/W
AO4604
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted): N-CHANNEL
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
Gate-Body leakage current VDS=0V, VGS=±20V
Gate Threshold Voltage VDS=V
GS ID
=250µA
On state drain current VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.0A
Forward Transconductance VDS=5V, ID=6.9A
Diode Forward Voltage IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30 V
1
5
µA
100 nA
1 1.9 3 V
20 A
22.5 28
31.3 38
34.5 42
mΩ
m
10 15.4 S
0.76 1 V
3A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
680 pF
102 pF
77 pF
3 Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=6.9A
=10V, VDS=15V, RL=2.2Ω,
V
GS
R
=3Ω
GEN
=6.9A, dI/dt=100A/µs
I
F
IF=6.9A, dI/dt=100A/µs
13.84 nC
6.74 nC
1.82 nC
3.2 nC
4.6 ns
4.1 ns
20.6 ns
5.2 ns
16.5
ns
7.8 nC
A: The value of R
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
AO4604
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted): P-CHANNEL
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=-250µA, VGS=0V
D
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=5.0A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C
TJ=125°C
-30 V
-1
-5
µA
±100 nA
-1 -1.8 -3 V
-10 A
39 52
54 70
67 87
mΩ
m
6 8.6 S
-0.77 -1 V
-2.8 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
VGS=0V, VDS=-15V, f=1MHz
=0V, VDS=0V, f=1MHz
GS
700 pF
120 pF
75 pF
10 Ω
SWITCHING PARAMETERS
Qg (10V)
Qg (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3Ω,
R
=3Ω
GEN
IF=-5A, dI/dt=100A/µs
=-5A, dI/dt=100A/µs
I
F
14.7 nC
7.6 nC
2nC
3.8 nC
8.3 ns
5ns
29 ns
14 ns
23.5
ns
13.4 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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