ALPHA & OMEGA SEMICONDUCTOR AO4466 Datasheet
Symbol
Symbol
Typ
Max
B, G
A
Absolute Maximum Ratings T
=25°C unless otherwise noted
B
A
B, G
AO4466
G
S
D
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4466/L uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance.
AO4466 and AO4466L are electrically identical.
-RoHS Compliant
-AO4466L is Halogen Free
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Power Dissipation
Avalanche Current
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
and low gate charge. This
DS(ON)
SOIC-8
A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
V
DS
V
GS
I
D
I
DM
P
D
I
AR
E
AR
TJ, T
STG
Features
VDS (V) = 30V
ID = 9.4A (VGS = 10V)
R
R
100% UIS Tested!
100% Rg Tested!
< 23mΩ (V
DS(ON)
< 35mΩ (V
DS(ON)
Maximum UnitsParameter
-55 to 150
30
9.4
7.7
50
3.1
2.1
18
16
G
= 10V)
GS
= 4.5V)
GS
D
S
V
V±20
A
W
A
mJ
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
t ≤ 10s
Steady-State
C
Steady-State
R
θJA
R
θJL
34 40
62 75
18 24
°C/W
°C/W
°C/W
AO4466
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
=250µA, V
D
VDS=30 VGS=0V
VDS=0V, VGS= ±20V
VDS=V
GS ID
VGS=4.5V, VDS=5V
VGS=10V, ID=9.4A
VGS=4.5V, ID=5A
VDS=5V, ID=9.4A
IS=1A,VGS=0V
=0V
GS
=250µA
30 V
TJ=55°C 5
100 nA
1 1.6 3 V
20 A
17 23
TJ=125°C 24 30
27 35 mΩ
10 24 S
0.75 1 V
4.3 A
1
µA
mΩ
I
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
0.4 0.8 1.5 Ω
621 820 pF
118 pF
85 119 pF
SWITCHING PARAMETERS
Qg(10V) 11.3 17 nC
Qg(4.5V) 5.7 8 nC
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
t
rr
Q
rr
A: The value of R
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev 6: Aug 2008
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=9.4A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, R
R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
θJA
is the sum of the thermal impedence from junction to lead R
θJA
I
I
I
I
=3Ω
GEN
=9.4A, dI/dt=100A/µs
F
=9.4A, dI/dt=100A/µs
F
=9.4A, dI/dt=500A/µs
F
=9.4A, dI/dt=500A/µs
F
and lead to ambient.
θJL
=1.6Ω,
L
2.1 nC
3 nC
4.5 6.5 ns
3.1 5 ns
15.1 23 ns
2.7 5 ns
15.5 21
ns
7.1 nC
8.1 11
ns
10.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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