ALPHA & OMEGA SEMICONDUCTOR AO4456 Datasheet

General Description Product Summary

V

Symbol

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

A D

SRFET

TM

D

D

D

D

S

S

S

G

AO4456

30V N-Channel MOSFET

SRFETTM AO4456 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R

,and low gate charge. This device is

DS(ON)

suitable for use as a low side FET in SMPS, load
switching and general purpose applications.

DS

ID (at VGS=10V) 20A
R
R

(at VGS=10V) < 4.6mΩ

DS(ON)

(at VGS = 4.5V) < 5.6mΩ

DS(ON)

100% UIS Tested
100% Rg Tested

SOIC-8

Top View Bottom View

G

A

D

S

Maximum UnitsParameter

Drain-Source Voltage 30

Continuous Drain

G

Current

Avalanche Current
Avalanche energy L=0.1mH

TC=25°C
TC=70°C

C

C

C

TC=25°C

B

Power Dissipation

TC=70°C

Junction and Storage Temperature Range -55 to 150

V

DS

V

GS

I

D

I

DM

IAS, I
EAS, E

P

D

TJ, T

AR

STG

±12Gate-Source Voltage

20
16

120Pulsed Drain Current

AR

110

3.1

2.0

30V

TM

SRFET
Soft Recovery MOSFET:

Integrated Schottky Diode

V
V

A

A47

mJ

W
°C

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

Rev9: March 2011 www.aosmd.com Page 1 of 7

Parameter Typ

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

31
59
16

Max

40
75
24

Units

°C/W
°C/W
°C/W

with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a s ingle pulse rating.

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO4456

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 0.1

TJ=125°C 20
VDS=0V, VGS= ±12V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A

1.2 1.8 2.4 V

120 A

3.8 4.6

100 nA

TJ=125°C 5.9 7.4
VGS=4.5V, ID=18A
VDS=5V, ID=20A
IS=1A,VGS=0V

4.5 5.6 mΩ

112 S

0.5 0.7 V
5 A

mA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

4320 5185 pF

570 pF
310 493 pF

0.2 0.5 0.9 Ω

SWITCHING PARAMETERS

Qg(10V) 60 77 95 nC
Qg(4.5V) 30 44 42 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

VGS=10V, VDS=15V, ID=20A

VGS=10V, VDS=15V, RL=0.75Ω,
R

=3Ω

GEN

IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs

9.8 nC

16 nC
11 ns
10 ns
46 ns

9.5 ns

12 15 ns
20

nC

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev9: March 2011 www.aosmd.com Page 2 of 7

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

125°C

25°C

125°C

AO4456

180

10V

160
140
120
100

(A)

D

I

80
60
40
20

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

6

5

)

Ω

Ω

Ω

Ω

(m

4

DS(ON)

R

3

2

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and Gate

4.5V

6V

VGS=3.5V

VDS (Volts)

VGS=4.5V

VGS=10V

ID (A)

Voltage (Note E)

30

VDS=5V

25

20

(A)

15

D

I

10

5

0

1 2 3 4

Figure 2: Transfer Characteristics (Note E)

1.80

1.60

1.40

1.20

1.00

Normalized On-Resistance

0.80
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

VGS(Volts)

VGS=10V
ID=20A

Temperature (°C)

25°C

VGS=4.5V
ID=18A

(Note E)

17

5
2

10

0

18

10

8

)

Ω

Ω

Ω

Ω

(m

6

DS(ON)

R

4

2

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS (Volts)

(Note E)

ID=20A

1.0E+02

1.0E+01

(A)

1.0E+00

S

I

1.0E-01

1.0E-02

40

0.0 0.2 0.4 0.6 0.8 1.0

VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

Rev9: March 2011 www.aosmd.com Page 3 of 7