ALPHA & OMEGA SEMICONDUCTOR AO4435 Datasheet
Symbol
Parameter
Symbol
Typ
Max
A
A
Absolute Maximum Ratings T
=25°C unless otherwise noted
B
B
B
AO4435
V
with a 25V gate rating. This device is suitable for use as
D
D
D
D
S
S
S
G
30V P-Channel MOSFET
General Description
The AO4435 uses advanced trench technology to
provide excellent R
a load switch or in PWM applications.
-RoHS Compliant
-AO4435 is Halogen Free
Top View Bottom View
, and ultra-low low gate charge
DS(ON)
SOIC-8
Product Summary
= -30V
DS
ID = -10.5A (VGS = -20V)
R
R
R
100% UIS Tested
100% Rg Tested
< 14mΩ (VGS = -20V)
DS(ON)
< 18mΩ (VGS = -10V)
DS(ON)
< 36mΩ (VGS = -5V)
DS(ON)
G
D
S
A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
TA=25°C
TA=70°C
Pulsed Drain Current
TA=25°C
Power Dissipation
A
TA=70°C
Avalanche Current
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady State
Steady State
V
DS
V
GS
I
D
I
DM
P
D
I
AR
E
AR
TJ, T
R
R
STG
θJA
θJL
Maximum
-30
±25
-10.5
-8
-80
3.1
2.0
-20
60
32 40
60 75
17 24
UnitsParameter
V
V
A
W
A
mJ
°C-55 to 150
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4435
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID = -250µA, V
V
= -30V, V
DS
V
= 0V, V
DS
V
= V
DS
GS ID
V
= -10V, V
GS
V
= -20V, ID = -11A
GS
V
= -10V, ID = -10A
GS
V
= -5V, ID = -5A
GS
V
= -5V, ID = -10A
DS
IS = -1A,V
GS
GS
= -250µA
DS
= 0V
GS
= 0V
GS
= 0V
= ±25V
= -5V
-30 V
TJ = 55°C -5
±100 nA
-1.7 -2.3 -3 V
-80 A
11 14
TJ=125°C 15 19
15 18
27 36
22 S
-0.74 -1 V
-3.5 A
-1
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1130 1400 pF
240 pF
155 pF
1 5.8 8 Ω
SWITCHING PARAMETERS
Q
g(10V)
Q
g(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev7: Nov. 2010
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-10A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.5Ω,
R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
θJA
IF=-10A, dI/dt=100A/µs
IF=-10A, dI/dt=100A/µs
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
GEN
=3Ω
and lead to ambient.
θJL
18 24 nC
9.5
5.5 nC
3.3 nC
8.7 ns
8.5 ns
18 ns
7 ns
25 30
ns
12 nC
= 25°C.
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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