Alpha & Omega Semiconductor AO4433 Service Manual
p
A
A
查询AO4433供应商
AO4433
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4433 uses advanced trench technology to
provide excellent R
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected. Standard product AO4433
is Pb-free (meets ROHS & Sony 259 specifications).
O4433L is a Green Product ordering option.
O4433 and AO4433L are electrically identical.
, and ultra-low low gate
DS(ON)
SOIC-8
Top View
S
S
S
G
D
D
D
D
Features
VDS (V) = -30V
I
= -11 A (VGS = -20V)
D
R
R
ESD Rating: 1.5KV HBM
< 14mΩ (VGS = -20V)
DS(ON)
< 18mΩ (VGS = -10V)
DS(ON)
D
G
S
Absolute Maximum Ratings T
Drain-Source Voltage -30
=25°C
B
T
A
T
A
=70°C
Continuous Drain
Current
A
Pulsed Drain Current
TA=25°C
Power Dissipation
A
=70°C
T
A
Junction and Storage Temperature Range
=25°C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
Maximum UnitsParameter
-11
-9.7
-50
3
2.1
-55 to 150
V
V±25Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
28 40
54 75
21 30
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4433
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
V
V
Gate Threshold Voltage V
On state drain current
V
V
Static Drain-Source On-Resistance
V
V
Forward Transconductance
Diode Forward Voltage
V
I
Maximum Body-Diode Continuous Current
=-250µA, VGS=0V
D
=-24V, VGS=0V
DS
=0V, VGS=±25V
DS
DS=VGS ID
=-10V, VDS=-5V
GS
=-20V, ID=-11A
GS
=-10V, ID=-10A
GS
=-4.5V, ID=-4A
GS
=-5V, ID=-11A
DS
=-1A,VGS=0V
S
=-250µA
=55°C
T
J
=125°C
T
J
-30 V
-1
-5
±1
µA
µA
-2 -2.8 -4 V
-50 A
11 14
15 19
13.8 18
38.5
mΩ
m
m
20 S
-0.72 -1 V
-4.2 A
Ω
Ω
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
V
=0V, VDS=-15V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
GS
1760 2200 pF
360 pF
255 pF
6.4 8 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
=-10V, VDS=-15V, ID=-11A
GS
Turn-On DelayTime
=-10V, VDS=-15V, RL=1.5Ω,
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=3Ω
R
GEN
Turn-Off Fall Time
=-11A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
I
F
=-11A, dI/dt=100A/µs
I
F
30 38 nC
7nC
8nC
11.5 ns
8ns
35 ns
18.5 ns
24
30 ns
16 nC
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
Loading...