ALPHA & OMEGA SEMICONDUCTOR AO4433 Datasheet
Symbol
Symbol
Typ
Max
AF
A
Absolute Maximum Ratings T
=25°C unless otherwise noted
B
B
B
AO4433
with a 25V gate rating. This device is suitable for use
30V P-Channel MOSFET
General Description
The AO4433 uses advanced trench technology to
provide excellent R
as a load switch or in PWM applications.
Top View Bottom
and ultra-low low gate charge
DS(ON)
SOIC-8
Product Summary
VDS (V) = -30V
ID = -11 A (VGS = -20V)
R
R
R
ESD Protected
100% UIS Tested
100% Rg Tested
< 14mΩ (VGS = -20V)
DS(ON)
< 18mΩ (VGS = -10V)
DS(ON)
< 36mΩ (VGS= -5V)
DS(ON)
G
D
S
A
Maximum UnitsParameter
Drain-Source Voltage -30
Continuous Drain
Current
AF
TA=25°C
TA=70°C
TA=25°C
A
Power Dissipation
TA=70°C
Avalanche Current
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
I
AR
E
AR
TJ, T
STG
±25Gate-Source Voltage
-11
-9.7
-50Pulsed Drain Current
3
2.1
-36
65
-55 to 150
V
V
A
W
A
mJ
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
28 40
54 75
21 30
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4433
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
g
FS
V
SD
I
S
DSS
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
VDS=0V, VGS=±25V
VDS=V
GS ID
=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-11A
VGS=-10V, ID=-10A
VGS=-5V, ID=-5A
VDS=-5V, ID=-11A
IS=-1A,VGS=0V
-30 V
TJ=55°C -5
±10 µA
-1.5 -2.45 -3.5 V
-50 A
11 14
TJ=125°C 15 19
13.8 18 mΩ
25.8 36 mΩ
20 S
-0.72 -1 V
-4.2 A
-1
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3.2 6.4 8 Ω
1760 2200 pF
360 pF
255 357 pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev9: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-11A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.5Ω,
R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
θJA
is the sum of the thermal impedence from junction to lead R
θJA
IF=-11A, dI/dt=100A/µs
IF=-11A, dI/dt=100A/µs
GEN
=3Ω
and lead to ambient.
θJL
30 38 nC
7 nC
8 nC
11.5 ns
8 ns
35 ns
18.5 ns
24
30 ns
16 nC
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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