Alpha & Omega Semiconductor AO4423 Service Manual
p
A
查询AO4423供应商
AO4423
P-Channel Enhancement Mode Field Effect Transistor
Rev 4: May 2005
General Description
The AO4423 uses advanced trench technology to
provide excellent R
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected. AO4423L (Green Product) is offered
in a lead-free package. AO4423 is Pb-free (meets
, and ultra-low low gate
DS(ON)
Features
VDS (V) = -30V
I
= -15A
D
R
R
ESD Rating: 6000V HBM
< 7mΩ (VGS = -20V)
DS(ON)
< 8.5mΩ (VGS = -10V)
DS(ON)
ROHS & Sony 259 specifications). AO4423L is a
Green Product ordering option. AO4423 and
O4423L are electrically identical.
SOIC-8
Top View
S
S
S
G
Absolute Maximum Ratings T
Drain-Source Voltage -30
=25°C
B
T
A
T
A
=70°C
Continuous Drain
Current
A
Pulsed Drain Current
TA=25°C
Power Dissipation
A
=70°C
T
A
Junction and Storage Temperature Range
D
D
D
D
=25°C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
G
Maximum UnitsParameter
-15
-12.1
-80
3.1
2
-55 to 150
D
S
V
V±25Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
26 40
50 75
14 24
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4423, AO4423L
µ
µ
Ω
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=-250µA, VGS=0V
D
VDS=-24V, VGS=0V
V
=0V, VGS=±20V
DS
V
=0V, VGS=±25V
DS
Gate Threshold Voltage VDS=V
On state drain current
VGS=-10V, VDS=-5V
VGS=-20V, ID=-15A
Static Drain-Source On-Resistance
VGS=-10V, ID=-15A
VGS=-6V, ID=-10A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-15A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C
TJ=125°C
-30 V
-100
-500
nA
±1
±10
-2 -2.7 -3.5 V
-80 A
5.7 7
7.1 8.6
6.8 8.5
9.4 12
mΩ
m
m
43 S
-0.71 -1 V
-4.2 A
A
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
4632 pF
1034 pF
705 pF
2.5 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=-10V, VDS=-15V, ID=-15A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.0Ω,
R
=3Ω
GEN
Turn-Off Fall Time
=-15A, dI/dt=100A/µs
I
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
F
=-15A, dI/dt=100A/µs
I
F
82 nC
16.8 nC
23 nC
18.5 ns
20 ns
55 ns
30 ns
43
ns
38 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
-15
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
-12.8
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
Loading...