Alpha & Omega Semiconductor AO4420, AO4420L Service Manual

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AO4420, AO4420L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor

Rev 4: Nov 2004

General Description

The AO4420 uses advanced trench technology to
provide excellent R

body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L

shoot-through immunity and

DS(ON),

Features

VDS (V) = 30V
ID = 13.7A
R

DS(ON)

R

DS(ON)

( Green Product ) is offered in a lead-free package.

D

S
S
S
G

SOIC-8

D
D
D
D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol

Drain-Source Voltage

Gate-Source Voltage
Continuous Drain

Current

A

Pulsed Drain Current

Power Dissipation

TA=25°C

=70°C

T

A

B

T

=25°C

A

=70°C

T

A

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

< 10.5mΩ (VGS = 10V)
< 12mΩ (VGS = 4.5V)

Maximum UnitsParameter

30

13.7

9.7

60

3.1

2

-55 to 150

V

V±12

A

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

C

t ≤ 10s
Steady-State
Steady-State

Symbol Typ Max

R

θJA

R

θJL

28 40
54 75
21 30

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AO4420, AO4420L

Ω

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage ID=250µA, VGS=0V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

VDS=24V, VGS=0V

VDS=0V, VGS= ±12V

VDS=V

GS ID

=250µA

VGS=4.5V, VDS=5V

VGS=10V, ID=13.7A

Static Drain-Source On-Resistance

VGS=4.5V, ID=12.7A

Forward Transconductance

Diode Forward Voltage I

VDS=5V, ID=13.7A

=1A,VGS=0V

S

Maximum Body-Diode Continuous Current

TJ=55°C

TJ=125°C

30 V

0.004 1

5

µA

100 nA

0.6 1.1 2 V

40 A

8.3 10.5

12.5 15

9.7 12

mΩ

m

30 37 S

0.76 1 V

5A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

3656 4050 pF

256 pF

168 pF

0.86 1.1 Ω

SWITCHING PARAMETERS

Qg(4.5V)

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value

θJA

is the sum of the thermal impedence from junction to lead R

θJA

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

VGS=10V, VDS=15V, ID=13.7A

VGS=10V, VDS=15V, RL=1.1Ω,
R

=0Ω

GEN

=13.7A, dI/dt=100A/µs

I

F

IF=13.7A, dI/dt=100A/µs

and lead to ambient.

θJL

30.5 36 nC

4.6 nC

8.6 nC

5.5 9 ns

3.4 7 ns

49.8 75 ns

5.9 11 ns

22.5 28

ns

12.5 16 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4420, AO4420L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

50

VGS =2.5V

40

(A)

30

D

I

20

VGS =2.0V

10

0

012345

V

(Volts)

DS

Figure 1: On-Regions Characteristi

cs

12

)
(m

R

11

10

Ω

9

DS(ON)

8

VGS =4.5V

VGS =10V

7

6

0 5 10 15 20 25 30

I

A)

D(

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

30

VGS=5V

25

20

(A)

15

D

I

125°C

10

5

25°C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

(Volts)

GS

Figure 2: Transfer Characteristics

1.8
ID=13.7A

1.6

VGS=4.5V

1.4

VGS=10V

1.2

1.0

Normalize ON-Resistance

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

30

ID=13.7A

125°C

)

Ω

(m

R

25

20

15

DS(ON)

10

25°C

5

0

0246810

V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

1E+01

1E+00

(A)

S

I

1E-01

1E-02

125°C

1E-03

1E-04

25°C

1E-05

0.0 0.2 0.4 0.6 0.8 1.0

V

(Volts)

SD

Figure 6: Body-Diode Characteristics