Alpha & Omega Semiconductor AO4419 Service Manual
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AO4419
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4419 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4419 is Pb-free
(meets ROHS & Sony 259 specifications). AO4419L
, and low gate charge. This
DS(ON)
Features
VDS (V) = -30V
I
= -9.7 A (VGS = -10V)
D
R
R
< 20mΩ (VGS = -10V)
DS(ON)
< 35mΩ (VGS = -4.5V)
DS(ON)
is a Green Product ordering option. AO4419 and
O4419L are electrically identical.
SOIC-8
Top View
S
S
S
G
Absolute Maximum Ratings T
D
D
D
D
=25°C unless otherwise noted
A
G
Symbol
Drain-Source Voltage -30
=25°C
B
T
A
T
A
=70°C
Continuous Drain
Current
A
Pulsed Drain Current
TA=25°C
Power Dissipation
A
=70°C
T
A
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
D
S
Maximum UnitsParameter
±20Gate-Source Voltage
-9.7
-8.1
-40
3
2.1
-55 to 150
V
V
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
31 40
63 75
21 30
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4419
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
V
V
Gate Threshold Voltage V
On state drain current
V
V
Static Drain-Source On-Resistance
V
Forward Transconductance
Diode Forward Voltage
V
I
Maximum Body-Diode Continuous Current
=-250µA, VGS=0V
D
=-24V, VGS=0V
DS
=0V, VGS=±20V
DS
DS=VGS ID
=-10V, VDS=-5V
GS
=-10V, ID=-9.7A
GS
=-4.5V, ID=-7A
GS
=-5V, ID=-9.7A
DS
=-1A,VGS=0V
S
=-250µA
=55°C
T
J
=125°C
T
J
-30 V
-1
-5
µA
±100 nA
-1.4 -2 -2.7 V
-40 A
16 20
20.9 26
26 35
mΩ
m
21.7 S
-0.7 -1 V
-1.2 A
Ω
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=-15V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
1573 1900 pF
319 pF
211 pF
6.7 8 Ω
SWITCHING PARAMETERS
Q
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
(10V)
g
(4.5V)
g
gs
gd
rr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
=-10V, VDS=-15V, ID=-9.7A
GS
=-10V, VDS=-15V, RL=1.5Ω,
V
GS
R
=3Ω
GEN
=-9.7A, dI/dt=100A/µs
I
F
=-9.7A, dI/dt=100A/µs
I
F
26.4 32 nC
13.7 17 nC
3.8 nC
6.8 nC
9.5 ns
8ns
44.2 ns
22.2 ns
25.2 31
ns
14.1 nC
A: The value of R
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 2 : May 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C.
A
Alpha & Omega Semiconductor, Ltd.
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