Alpha & Omega Semiconductor AO4415 Service Manual
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AO4415
P-Channel Enhancement Mode Field Effect Transistor
ugust 2002
General Description
The AO4415 uses advanced trench technology to
provide excellent R
charge. This device is suitable for use as a load
switch or in PWM applications.
Absolute Maximum Ratings T
Drain-Source Voltage -30
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
Junction and Storage Temperature Range
, and ultra-low low gate
DS(ON)
SOIC-8
Top View
S
S
S
G
=25°C
T
A
=70°C
T
A
B
D
D
D
D
=25°C unless otherwise noted
A
TA=25°C
=70°C
T
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
Features
VDS (V) = -30V
I
= -8 A
D
R
R
G
< 26mΩ (VGS = -20V)
DS(ON)
< 35mΩ (VGS = -10V)
DS(ON)
D
S
Maximum UnitsParameter
-6.6
-40
2.1
-55 to 150
-8
3
V
V±25Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
24 40
54 75
21 30
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4415
Ω
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=-250µA, VGS=0V
D
VDS=-24V, VGS=0V
VDS=0V, VGS=±25V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-10V, VDS=-5V
VGS=-20V, ID=-8A
Static Drain-Source On-Resistance
VGS=-10V, ID=-8A
VGS=-6V, ID=-5A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-8A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C
TJ=125°C
-30 V
-1
-5
µA
±100 nA
-1.7 -2.8 -3.5 V
40 A
21.5 26
29 35
28.5 35
41
mΩ
m
m
11.5 S
-0.76 -1 V
-4.2 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
Output Capacitance
=0V, VDS=-15V, f=1MHz
GS
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
893 pF
204 pF
151 pF
4 Ω
SWITCHING PARAMETERS
Qg(10V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge (10V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-8A
VGS=-10V, VDS=-15V, RL=1.8Ω,
R
=3Ω
GEN
IF=-8A, dI/dt=100A/µs
=-8A, dI/dt=100A/µs
I
F
16.6 nC
3.2 nC
5.2 nC
10.5 ns
7.3 ns
15.1 ns
8.6 ns
21
ns
10.7 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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