Alpha & Omega Semiconductor AO4414A Service Manual
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AO4414A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4414A uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
and low gate charge. This
DS(ON)
Features
VDS (V) = 30V
I
= 8.5A (VGS = 10V)
D
R
DS(ON)
R
DS(ON)
used to bypass the source inductance. Standard
Product AO4414A is Pb-free (meets ROHS & Sony
259 specifications). AO4414AL is a Green Product
ordering option. AO4414A and AO4414AL are
electrically identical.
S
S
S
G
D
D
D
D
G
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Drain-Source Voltage
Gate-Source Voltage
=25°C
B
T
A
T
A
T
A
T
A
=70°C
=25°C
=70°C
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
< 26mΩ (VGS = 10V)
< 40mΩ (VGS = 4.5V)
D
S
Maximum UnitsParameter
30
8.5
7.1
50
3
2.1
-55 to 150
V
V±20
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
34 40
62 75
18 24
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4414A
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
V
V
Gate Threshold Voltage V
On state drain current
V
V
Static Drain-Source On-Resistance
V
Forward Transconductance
Diode Forward Voltage
V
I
Maximum Body-Diode Continuous Current
=250µA, VGS=0V
D
=24V, VGS=0V
DS
=0V, VGS= ±20V
DS
DS=VGS ID
GS
GS
GS
DS
=1A,VGS=0V
S
=250µA
=4.5V, VDS=5V
=10V, ID=8.5A
=4.5V, ID=5A
=5V, ID=8.5A
=55°C
T
J
=125°C
T
J
30 V
0.004 1
5
µA
100 nA
1 1.8 3 V
20 A
17 26
24 30
27 40
mΩ
m
10 24 S
0.77 1 V
4.3 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
V
=0V, VDS=15V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
GS
621 820 pF
118 pF
85 pF
0.8 1.5 Ω
SWITCHING PARAMETERS
(10V)
Q
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
(4.5V)
g
gs
gd
rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
=10V, VDS=15V, ID=8.5A
GS
V
=10V, VDS=15V, RL=1.8Ω,
GS
R
=3Ω
GEN
IF=8.5A, dI/dt=100A/µs
=8.5A, dI/dt=100A/µs
I
F
11.3 17 nC
5.7 8 nC
2.1 nC
3nC
4.5 6.5 ns
3.1 5 ns
15.1 23 ns
2.7 5 ns
15.5 21
ns
7.1 10 nC
A: The value of R
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
Rev 0: December 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
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