Alpha & Omega Semiconductor AO4409 Service Manual

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AO4409
P-Channel Enhancement Mode Field Effect Transistor

Nov 2002

General Description

The AO4409 uses advanced trench technology to
provide excellent R

charge. This device is suitable for use as a load
switch or in PWM applications.

Absolute Maximum Ratings T

Drain-Source Voltage -30

Continuous Drain
Current

A

Pulsed Drain Current

Power Dissipation

A

Junction and Storage Temperature Range

, and ultra-low low gate

DS(ON)

SOIC-8

Top View

S
S
S
G

=25°C

T

A

=70°C

T

A

B

D
D
D
D

=25°C unless otherwise noted

A

TA=25°C

=70°C

T

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

Features

VDS (V) = -30V
I

= -15 A

D

Max R
Max R

G

< 7.5mΩ (VGS = -10V)

DS(ON)

< 12mΩ (VGS = -4.5V)

DS(ON)

D

S

Maximum UnitsParameter

±20Gate-Source Voltage

-15

-12.8

-80

2.1

-55 to 150

3

V

V

A

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Ty

R

θJA

R

θJL

26 40
50 75
14 24

Max

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AO4409

Ω

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

I

=-250µA, VGS=0V

D

VDS=-24V, VGS=0V

VDS=0V, VGS=±20V

Gate Threshold Voltage VDS=V

On state drain current

VGS=-10V, VDS=-5V

VGS=-10V, ID=-15A

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-10A

Forward Transconductance

Diode Forward Voltage

VDS=-5V, ID=-15A

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

GS ID

=-250µA

TJ=55°C

TJ=125°C

-30 V

-5

-25

µA

±100 nA

-1.4 -1.9 -2.7 V

80 A

6.2 7.5

8.2 11.5

9.5 12

mΩ

m

35 50 S

-0.71 -1 V

-5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

VGS=0V, VDS=-15V, f=1MHz

Reverse Transfer Capacitance

Gate resistance VGS=0V, VDS=0V, f=1MHz

5270 pF

945 pF

745 pF

2 Ω

SWITCHING PARAMETERS

Q

g

Qg(4.5V)

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Total Gate Charge

Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=-10V, VDS=-15V, ID=-15A

VGS=-10V, VDS=-15V, RL=1Ω,
R

=3Ω

GEN

IF=-15A, dI/dt=100A/µs

IF=-15A, dI/dt=100A/µs

100 nC

51.5 nC

14.5 nC

23 nC

14 ns

16.5 ns

76.5 ns

37.5 ns

36.7

ns

28 nC

A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

and lead to ambient.

θJL

=25°C. The

A

Alpha & Omega Semiconductor, Ltd.