Alpha & Omega Semiconductor AO4408, AO4408L Service Manual
A
查询AO4408供应商
AO4408, AO4408L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 3: June 2004
General Description
The AO4408 uses advanced trench technology to
provide excellent R
switching. This device makes an excellent high side
switch for notebook CPU core DC-DC conversion.
O4408L(Green Product) is offered in a lead-free
, low gate charge and fast
DS(ON)
Features
VDS (V) = 30V
ID = 12A
R
DS(ON)
R
DS(ON)
package.
D
S
S
S
G
SOIC-8
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Drain-Source Voltage
Gate-Source Voltage
=25°C
B
B,E
T
A
T
=70°C
A
B,E
=25°C
T
A
TA=70°C
L=0.1mH
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
AV
E
AV
P
D
TJ, T
STG
< 13mΩ (VGS = 10V)
< 16mΩ (VGS = 4.5V)
Maximum UnitsParameter
30
12
10
80
30
100
3
2.1
-55 to 150
V
V±12
A
A
mJ
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
23 40
48 65
12 16
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=250µA, VGS=0V
D
=24V, VGS=0V
V
DS
V
=0V, VGS= ±12V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
DS
I
=10A,VGS=0V
S
=250µA
=4.5V, VDS=5V
=10V, ID=12A
=4.5V, ID=10A
=5V, ID=10A
=55°C
T
J
=125°C
T
J
30 V
0.003 1
5
µA
100 nA
1 1.5 2.5 V
40 A
10.5 14
16 21
13 16.5
mΩ
m
30 48 S
0.76 1 V
4.5 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
V
=0V, VDS=15V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
GS
1020 1200 pF
320 pF
80 pF
0.25 0.5 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=15V, ID=12A
V
=10V, VDS=15V, RL=1.2Ω,
GS
R
=3Ω
GEN
I
=12A, dI/dt=100A/µs
F
I
=12A, dI/dt=100A/µs
F
10.3 12.5 nC
2.1 nC
3.9 nC
3.9 5.5 ns
36ns
19.2 30 ns
2.6 5 ns
26
32 ns
18 32 nC
A: The value of R
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
and lead to ambient.
θJL
100
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
Loading...