ALPHA & OMEGA SEMICONDUCTOR AO4407 Datasheet
General Description Product Summary
V
Symbol
Absolute Maximum Ratings T
=25°C unless otherwise noted
D
D
S
S
V
DS
A D
V
Drain-Source Voltage
-30
A
AO4407
30V P-Channel MOSFET
The AO4407 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
. This device is ideal for load switch
DS(ON)
and battery protection applications.
DS
ID (at VGS=-20V) -12A
R
R
R
(at VGS=-20V) < 13mΩ
DS(ON)
(at VGS =-10V) < 14mΩ
DS(ON)
(at VGS =-5V) < 30mΩ
DS(ON)
-30V
* RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
SOIC-8
Top View Bottom View
D
D
S
A
G
G
D
S
Maximum UnitsParameter
V
GS
C
B
TA=25°C
TA=70°C
C
TA=25°C
TA=70°C
I
D
I
DM
IAS, I
C
EAS, E
P
D
TJ, T
AR
AR
STG
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.3mH
Power Dissipation
Junction and Storage Temperature Range -55 to 150 °C
-12
-10
-60
101
3.1
2
mJ
V±25Gate-Source Voltage
A
A26
W
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJL
31
59
16
40
75
24
UnitsParameter Typ Max
°C/W
°C/W
°C/W
www.aosmd.com Page 1 of 5
tr9.4
ns
Turn-On Rise Time
VGS=-10V, V
=-15V,
Electrical Characteristics (TJ=25°C unless otherwise noted)
AO4407
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=-250µA, VGS=0V
-30 V
VDS=-30V, VGS=0V -1
TJ=55°C -5
VDS=0V, VGS= ±25V
VDS=V
GS ID
=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-12A
VGS=-10V, ID=-12A
-1.7 -2.25 -2.8 V
-60 A
±100 nA
8.5 13 mΩ
10 14
TJ=125°C 12 19
VGS=-5V, ID=-7A
VDS=-5V, ID=-10.5A
IS=-1A,VGS=0V
19 30 mΩ
27 S
-0.72 -1 V
µA
mΩ
-4 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2060 2600 pF
370 pF
295 pF
1.2 2.4 3.6 Ω
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
θJA
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
J(MAX)
is the sum of the thermal impedence from junction to lead R
θJA
J(MAX)
VGS=-10V, VDS=-15V, ID=-12A
DS
RL=1.25Ω, R
GEN
=3Ω
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and lead to ambient.
θJL
=150°C. The SOA curve provides a single pulse rating.
24 30 36 nC
4.6 nC
10 nC
11 ns
24 ns
12 ns
30 40 ns
22
nC
Rev.14.0: July 2013 www.aosmd.com Page 2 of 5
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Loading...