Alpha & Omega Semiconductor AO4406 Service Manual

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AO4406
N-Channel Enhancement Mode Field Effect Transistor

March 2002

General Description

The AO4406 uses advanced trench technology to
provide excellent R

operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion.

S
S
S
G

SOIC-8

, low gate charge and

DS(ON)

D
D
D
D

Features

VDS (V) = 30V
ID = 11.5A

R

R

R

G

DS(ON)

DS(ON)

DS(ON)

D

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol

Drain-Source Voltage

Gate-Source Voltage

=25°C

B

B,E

T

A

T

=70°C

A

B,E

=25°C

T

A

TA=70°C

L=0.1mH

Continuous Drain
Current

A

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

AV

E

AV

P

D

TJ, T

STG

< 14mΩ (VGS = 10V)

< 16.5mΩ (VGS = 4.5V)

< 26mΩ (VGS = 2.5V)

Maximum UnitsParameter

30

11.5

9.6

80

25

78

3

2.1

-55 to 150

V

V±12

A

A

mJ

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Typ Max

R

θJA

R

θJL

23 40
48 65
12 16

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AO4406

Ω

Ω

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage V

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage
Maximum Body-Diode Continuous Current

I

=250µA, VGS=0V

D

=24V, VGS=0V

V

DS

V

=0V, VGS= ±12V

DS

DS=VGS ID

V

GS

V

GS

V

GS

V

GS

V

DS

I

=10A,VGS=0V

S

=250µA

=4.5V, VDS=5V

=10V, ID=12A

=4.5V, ID=10A

=2.5V, ID=8A

=5V, ID=10A

=55°C

T

J

=125°C

T

J

30 V

1

5

µA

100 nA

0.8 1 1.5 V

60 A

11.5 14

16 19.2

13.5 16.5

19.5 26

mΩ

m

m

25 38 S

0.83 1 V

4.5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

V

=0V, VDS=15V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

1630 pF

201 pF

142 pF

0.8 Ω

SWITCHING PARAMETERS

Q

Q

Q

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

gs

gd

rr

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=4.5V, VDS=15V, ID=11.5A

V

=10V, VDS=15V, RL=1.2Ω,

GS

R

=3Ω

GEN

IF=10A, dI/dt=100A/µs

=10A, dI/dt=100A/µs

I

F

18 nC

2.5 nC

5.5 nC

4ns

5ns

32 ns

5ns

18,7

ns

19.8 nC

A: The value of R
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.

AO4406

V

GS

V

GS

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50

10V

40

4.5V

3V

2.5V

30

(A)

D

I

20

2V

10

VGS=1.5V

0

012345

V

(Volts)

DS

Fig 1: On-Region Characteristics

30

25

VGS=2.5V

20

)

Ω

(m

DS(ON)

R

15

10

=4.5V

=10V

5

30

25

VDS=5V

20

15

(A)

D

I

10

125°C

25°C

5

0

0 0.5 1 1.5 2 2.5 3

V

(Volts)

GS

Figure 2: Transfer Characteristics

1.8

ID=10A

VGS=10V

1.6

VGS=4.5V

1.4

VGS=2.5V

1.2

1

Normalized On-Resistance

0

0 5 10 15 20 25 30

I

(A)

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

40

ID=10A

30

)

Ω

(m

DS(ON)

R

20

25°C

125°C

10

0

0.00 2.00 4.00 6.00 8.00 10.00

V

GS

(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

1.0E+01

VGS=0V

1.0E+00

125°C

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

25°C

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

SD

(Volts)

Figure 6: Body-Diode Characteristics

Alpha and Omega Semiconductor, Ltd.