Alpha & Omega Semiconductor AO4404 Service Manual
查询AO4404供应商
AO4404
N-Channel Enhancement Mode Field Effect Transistor
July 2001
General Description
The AO4404 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in
PWM applications. The source leads are separated
to allow a Kelvin connection to the source, which
may be used to bypass the source inductance.
S
S
S
G
SOIC-8
Absolute Maximum Ratings T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
, low gate charge and
DS(ON)
D
D
D
D
=25°C unless otherwise noted
A
T
=25°C
A
T
=70°C
A
B
=25°C
T
A
T
=70°C
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
Features
VDS (V) = 30V
I
D
R
R
R
G
= 8.5A
< 24mΩ (VGS = 10V)
DS(ON)
< 30mΩ (VGS = 4.5V)
DS(ON)
< 48mΩ (VGS = 2.5V)
DS(ON)
D
S
Maximum UnitsParameter
30
8.5
7.1
60
3
2.1
-55 to 150
V
V±12
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State °C/W
Symbol Typ Max
R
θJA
R
θJL
31 40
59 75
16 24
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4404
Ω
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
Gate Threshold Voltage VDS=V
On state drain current
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
Static Drain-Source On-Resistance
VGS=4.5V, ID=8.5A
VGS=2.5V, ID=5A
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=5A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=250µA
TJ=55°C 5
=125°C 30 36
T
J
30 V
1
µA
100 nA
0.7 1 1.4 V
40 A
20.5 24
25 30
40 48
mΩ
m
m
10 16 S
0.71 1 V
4.3 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
Output Capacitance
=0V, VDS=15V, f=1MHz
GS
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
857 pF
97 pF
71 pF
1.4 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=4.5V, VDS=15V, ID=8.5A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.8Ω,
R
=6Ω
GEN
Turn-Off Fall Time
=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
I
F
IF=5A, dI/dt=100A/µs
9.7 nC
1.63 nC
3.1 nC
14 ns
4ns
33 ns
5ns
15
ns
8.6 nC
A: The value of R
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
Loading...