Alpha & Omega Semiconductor AO4403 Service Manual
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AO4403
P-Channel Enhancement Mode Field Effect Transistor
December 2001
General Description
The AO4403 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
, low gate charge and
DS(ON)
Features
VDS (V) = -30V
I
= -6.1 A
D
R
R
R
< 46mΩ (VGS = -10V)
DS(ON)
< 61mΩ (VGS = -4.5V)
DS(ON)
< 117mΩ (VGS = -2.5V)
DS(ON)
used to bypass the source inductance.
SOIC-8
Top View
S
S
S
G
Absolute Maximum Ratings T
D
D
D
D
=25°C unless otherwise noted
A
G
Symbol
V
Drain-Source Voltage -30
=25°C
T
B
A
T
A
=70°C
Continuous Drain
Current
A
TA=25°C
A
=70°C
Power Dissipation
T
A
Junction and Storage Temperature Range
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
D
S
Maximum UnitsParameter
-6.1
-5.1
-60Pulsed Drain Current
3
2.1
-55 to 150
V
V±12Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
31 40
59 75
16 24
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4403
Ω
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-6.1A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-1A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C -5
=125°C 70
T
J
-30 V
-1
µA
±100 nA
-0.7 -1 -1.3 V
A
38 46
49 61
76 117
mΩ
m
m
711 S
-0.75 -1 V
-4.2 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
Output Capacitance
=0V, VDS=-15V, f=1MHz
GS
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
940 pF
104 pF
73 pF
6 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=-4.5V, VDS=-15V, ID=-5A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=2.4Ω,
R
=6Ω
GEN
Turn-Off Fall Time
=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
I
F
IF=-5A, dI/dt=100A/µs
9.4 nC
2nC
3nC
7.6 ns
8.6 ns
44.7 ns
16.5 ns
22.7
ns
15.9 nC
A: The value of R
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C.
A
Alpha & Omega Semiconductor, Ltd.
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