Alpha & Omega Semiconductor AO4402 Service Manual

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AO4402
N-Channel Enhancement Mode Field Effect Transistor

March 2002

General Description

The AO4402 uses advanced trench technology to
provide excellent R

operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.

S
S
S
G

SOIC-8

, low gate charge and

DS(ON)

D
D
D
D

Features

VDS (V) = 30V
I

D

R
R
R

G

= 12A

DS(ON)

DS(ON)

DS(ON)

D

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol

Drain-Source Voltage

Gate-Source Voltage

=25°C

B

T

A

T

A

T

A

T

A

=70°C

=25°C

=70°C

Continuous Drain
Current

A

Pulsed Drain Current

Power Dissipation

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

< 14mΩ (VGS = 10V)
< 16mΩ (VGS = 4.5V)
< 22mΩ (VGS = 2.5V)

Maximum UnitsParameter

30

12

10

80

3

2.1

-55 to 150

V

V±12

A

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Ty

R

θJA

R

θJL

23 40
48 65
12 16

Max

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AO4402

Ω

Ω

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

I

V

V

Gate Threshold Voltage V

On state drain current

V

V

Static Drain-Source On-Resistance

V

V

Forward Transconductance

Diode Forward Voltage

V

I

Maximum Body-Diode Continuous Current

=250µA, VGS=0V

D

=24V, VGS=0V

DS

=0V, VGS= ±12V

DS

DS=VGS ID

GS

GS

GS

GS

DS

=10A,VGS=0V

S

=250µA

=4.5V, VDS=5V

=10V, ID=12A

=4.5V, ID=10A

=2.5V, ID=8A

=5V, ID=5A

=55°C

T

J

=125°C

T

J

30 V

1

5

µA

100 nA

0.6 0.8 1.2 V

60 A

11.1 14

16 19.2

13.1 16

21 26

mΩ

m

m

25 50 S

0.8 1 V

4.5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

V

=0V, VDS=15V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

1630 pF

201 pF

142 pF

0.8 Ω

SWITCHING PARAMETERS

Q

Q

Q

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

gs

gd

rr

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=4.5V, VDS=15V, ID=12A

V

=10V, VDS=15V, RL=1.2Ω,

GS

R

=3Ω

GEN

IF=10A, dI/dt=100A/µs

=10A, dI/dt=100A/µs

I

F

19 nC

3.3 nC

5.2 nC

3ns

4.7 ns

33.5 ns

6ns

21

ns

11 nC

A: The value of R
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.