Alpha & Omega Semiconductor A04422 Service Manual

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AO4422
N-Channel Enhancement Mode Field Effect Transistor

Jan 2003

General Description

The AO4422 uses advanced trench technology to
provide excellent R

device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be

and low gate charge. This

DS(ON)

Features

VDS (V) = 30V
I

= 11A

D

R

DS(ON)

R

DS(ON)

used to bypass the source inductance.

D

S
S
S
G

SOIC-8

D
D
D
D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol

Drain-Source Voltage

Gate-Source Voltage

=25°C

B

T

A

T

A

T

A

T

A

=70°C

=25°C

=70°C

Continuous Drain
Current

A

Pulsed Drain Current

Power Dissipation

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

< 15mΩ (VGS = 10V)

< 24mΩ (VGS = 4.5V)

Maximum UnitsParameter

30

11

9.3

50

3

2.1

-55 to 150

V

V±20

A

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Ty

R

θJA

R

θJL

31 40
59 75
16 24

Max

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AO4422

Ω

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

I

=250µA, VGS=0V

D

VDS=24V, VGS=0V

VDS=0V, VGS= ±20V

Gate Threshold Voltage VDS=V

On state drain current

VGS=4.5V, VDS=5V

VGS=10V, ID=11A

Static Drain-Source On-Resistance

VGS=4.5V, ID=10A

Forward Transconductance

Diode Forward Voltage

VDS=5V, ID=11A

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

GS ID

=250µA

TJ=55°C

TJ=125°C

30 V

1

5

µA

100 nA

1 1.8 3 V

40 A

12.6 15

16.8 21

19.6 24

mΩ

m

25 S

0.75 1 V

4.3 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

VGS=0V, VDS=15V, f=1MHz

Reverse Transfer Capacitance

Gate resistance VGS=0V, VDS=0V, f=1MHz

1040 pF

180 pF

110 pF

0.7 Ω

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=10V, VDS=15V, ID=11A

VGS=10V, VDS=15V, RL=1.35Ω,
R

=3Ω

GEN

IF=11A, dI/dt=100A/µs

IF=11A, dI/dt=100A/µs

19.8 nC

9.8 nC

2.5 nC

3.5 nC

4.5 ns

3.9 ns

17.4 ns

3.2 ns

17.5

ns

7.6 nC

A: The value of R
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.

θJA

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.