Alpha & Omega AON7702A Schematic [ru]

General Description Product Summary

V

Symbol

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

A D

SRFET

TM

AON7702A

30V N-Channel MOSFET

SRFETTM AON7702A uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R

,and low gate charge. This device is

DS(ON)

suitable for use as a low side FET in SMPS, load
switching and general purpose applications.

DS

ID (at VGS=10V) 36A
R
R

(at VGS=10V) < 10mΩ

DS(ON)

(at VGS = 4.5V) < 13mΩ

DS(ON)

30V

100% UIS Tested
100% Rg Tested

Top View Bottom View

DFN 3x3A

Pin 1

A

Top View

1

2
3

4

8

7
6

5

G

D

SRFET
Soft Recovery MOSFET:

Integrated Schottky Diode

S

TM

Maximum UnitsParameter

Drain-Source Voltage 30

Continuous Drain
Current

Continuous Drain
Current

Avalanche Current
Avalanche energy L=0.1mH

TC=25°C
TC=100°C

C

TA=25°C
TA=70°C

C

C

TC=25°C

B

Power Dissipation

TC=100°C
TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

I

DSM

IAS, I
EAS, E

P

D

P

DSM

TJ, T

AR

STG

36
22
80Pulsed Drain Current

13.5
11

15

AR

11

mJ

23

9

3.1
2

V
V±12Gate-Source Voltage

A

A
A

W

W

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case

Rev 1: Feb. 2011 www.aosmd.com Page 1 of 6

Parameter

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJC

Typ Max

30
60

4.5

40
75

5.4

Units

°C/W
°C/W
°C/W

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 0.5

TJ=125°C 100
VDS=0V, VGS= ±12V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=13A

1.2 1.65 2.1 V
80 A

8.2 10

100 nA

TJ=125°C 12.5 15
VGS=4.5V, ID=11A
VDS=5V, ID=13A
IS=1A,VGS=0V

9.9 13 mΩ
80 S

0.4 0.7 V

30 A

mA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

930 1170 1400 pF

90 128 170 pF
45 89 125 pF

0.7 1.4 2.1 Ω

SWITCHING PARAMETERS

Qg(10V) 16 20 24 nC
Qg(4.5V) 7 8.7 10.5 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
Power dissipation P
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.

B. The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Total Gate Charge
Total Gate Charge
Gate Source Charge

VGS=10V, VDS=15V, ID=13A

Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.2Ω,

R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse ratin g.

J(MAX)

IF=13A, dI/dt=500A/µs

IF=13A, dI/dt=500A/µs

3.2 nC
3 nC
6 ns

2.4 ns

GEN

=3Ω

23 ns

4 ns

5.5
5

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and case to ambient.

θJC

7 8.5 ns

6.5 8

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 1: Feb. 2011 www.aosmd.com Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25°C

125°C

25°C

35

2.75V

30

25

20

(A)

D

I

15

10V
3V

2.5V

10

5

VGS=2.25V

0

0 1 2 3 4 5

VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

35

VDS=5V

30

25

20

(A)

D

I

15

10

5

25°C

0

1.5 1.75 2 2.25 2.5 2.75 3

VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

12

11

)

10

Ω

Ω

Ω

Ω

(m

9

DS(ON)

R

8

VGS=4.5V

VGS=10V

7

6

1 6 11 16 21 26

ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage (Note E)

25

ID=13A

20

)

Ω

Ω

Ω

Ω

15

(m

DS(ON)

R

125°C

10

5

2 4 6 8 10

VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

2

1.8

1.6

VGS=10V

1.4

1.2

1

Normalized On-Resistance

VGS=4.5V
ID=11A

0.8
0 25 50 75 100 125 150 175 200

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

1.0E+02

1.0E+01
125°C

(A)

S

I

40

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

0.0 0.2 0.4 0.6 0.8 1.0

VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

Rev 1: Feb. 2011 www.aosmd.com Page 3 of 6