Alpha & Omega AON7410 Schematic [ru]

AON7410

30V N-Channel MOSFET

G

S

Symbol

Typ

Max

C

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

A

C

C

S

Pin 1

General Description

The AON7410 uses advanced trench technology and design
to provide excellent R
device is suitable for use in DC - DC converters and Load
Switch applications.

RoHS and Halogen-Free Compliant

Top View Bottom View

Orderable Part Number

AON7410

with low gate charge. This

DS(ON)

DFN 3x3 EP

Pin 1

Package Type

DFN 3x3 EP

Features

VDS(V) = 30V
ID= 24A (VGS= 10V)
R

< 20mΩ (V

DS(ON)

R

< 26mΩ (V

DS(ON)

100% UIS Tested
100% Rg Tested

Top View

1

2

3

4

Form

Tape & Reel

= 10V)

GS

= 4.5V)

GS

8

7

6

5

Minimum Order Quantity

D

5000

A

Drain-Source Voltage

Continuous Drain

Current

B

TC=25°C

TC=100°C

Pulsed Drain Current

Continuous Drain

Current

A

TA=25°C

TA=70°C

Avalanche Current

Repetitive avalanche energy L=0.1mH

TC=25°C

B

Power Dissipation

TC=100°C

TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

Symbol

V

DS

V

GS

I

D

I

DM

I

DSM

IAS, I

AR

EAS, E

P

D

P

DSM

TJ, T

STG

AR

Maximum

30

±20Gate-Source Voltage

24

15

50

9.5

7.7

17 A

14 mJ

20

8.3

3.1

2

-55 to 150

UnitsParameter

V

V

A

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

B

t ≤ 10s
Steady-State

Steady-State

R

θJA

R

θJC

30 40
60 75

5 6

°C/W
°C/W
°C/W

Rev.12.0: August 2014 www.aosmd.com Page 1 of 6

Electrical Characteristics (TJ=25°C unless otherwise noted)

t

D(on)

5

ns

Turn-On DelayTime

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

=250µA, V

D

VDS=30V, VGS=0V

VDS=0V, VGS= ±20V

VDS=V

GS ID

VGS=10V, VDS=5V

VGS=10V, ID=8A

VGS=4.5V, ID=7A

VDS=5V, ID=8A

IS=1A,VGS=0V

=0V

GS

=250µA

30 V

TJ=55°C 5

±100

1.4 1.8 2.5 V

50 A

16 20

TJ=125°C 24 29

21 26

30 S

0.75 1 V

20 A

1

µA

nA

mΩ

I

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

440 550 660 pF

77 110 143 pF

33 55 77 pF

3 4 4.9 Ω

SWITCHING PARAMETERS

Qg (10V) 7.8 9.8 12 nC

Qg (4.5V) 3.6 4.6 5.5 nC

Q

gs

Q

gd

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

VGS=10V, VDS=15V, ID=8A

1.4 1.8 2.2 nC

1.3 2.2 3 nC

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
Power dissipation P
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R

E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev12: Jul-2011

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C.

J(MAX)

VGS=10V, VDS=15V, R
R

=3Ω

GEN

I

=8A, dI/dt=500A/µs

F

I

=8A, dI/dt=500A/µs

F

=150°C.

J(MAX)

and case to ambient.

θJC

=2Ω,

L

3.2 ns

24 ns

6 ns

7 9 11

12 15 18 nC

150

ns

Rev.12.0: August 2014

Rev.12.0: August 2014

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Page 2 of 6

Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0255075100

125

150

175

125°C

50

10V

40

30

(A)

D

I

20

10

0

0 1 2 3 4 5

Figure 1: On-Region Characteristics

26

24

22

)

Ω

(m

20

DS(ON)

R

18

16

4.5V

VGS= 3V

VDS(Volts)

VGS= 4.5V

VGS= 10V

4V

3.5V

50

VDS= 5V

40

30

(A)

D

I

20

10

0

1 2 3 4 5

1.8

1.6

1.4

1.2

1.0

Normalized On-Resistance

125°C

25°C

VGS(Volts)

Figure 2: Transfer Characteristics

VGS= 10V
ID= 8A

VGS= 4.5V
ID= 7A

14

14

0 5 10 15 20 25 30

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and

50

45

40

)

35

Ω

(m

30

25

DS(ON)

R

20

15

10

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

Gate Voltage

I

F

ID(A)

VGS(Volts)

=-6.5A, dI/dt=100A/µs

ID= 8A

0.8

0.8
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

1E+02

1E+01

1E+00

1E-01

1E-02

(A)

S

I

1E-03

1E-04

1E-05

1E-06

125°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics

Temperature (°C)

25°C

VSD(Volts)

Rev.12.0: August 2014

Rev.12.0: August 2014

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Page 3 of 6

Page 3 of 6