Alpha & Omega AON7408 Schematic [ru]

General Description Product Summary

V

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

V

A

V

Drain-Source Voltage

30

A

AON7408

30V N-Channel MOSFET

• The AON7408 uses advanced trench technology and
design to provide excellent R

with low gate charge.

DS(ON)

This device is suitable for use in general purpose
applications.

DS

ID (at VGS=10V) 18A
R
R

(at VGS=10V) < 20mΩ

DS(ON)

(at VGS=4.5V) < 32mΩ

DS(ON)

• RoHS and Halogen-Free Compliant

100% UIS Tested
100% Rg Tested

Top View Bottom View

DFN 3x3 EP

Pin 1

A

Top View

1

2
3

4

8

7
6

5

Maximum UnitsParameter

DS

V

GS

C

B

A

TC=25°C
TC=100°C

TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C

I

D

I

DM

I

DSM

P

D

P

DSM

TJ, T

STG

Continuous Drain

B

Current
Pulsed Drain Current
Continuous Drain

A

Current

Power Dissipation

Power Dissipation
Junction and Storage Temperature Range -55 to 150

±20Gate-Source Voltage

18

11.5
64
10

8

11

4.5

3.1
2

30V

D

G

S

V

A

A

W

W
°C

Thermal Characteristics
Parameter Typ Max

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

Symbol

t ≤ 10s
Steady-State

B

Steady-State

R

θJA

R

θJC

25
62

8.8

40
75
11

Units

°C/W
°C/W
°C/W

www.aosmd.com Page 1 of 6

t

15.8

ns

Turn-Off DelayTime

R

=3

Ω

Electrical Characteristics (TJ=25°C unless otherwise noted)

AON7408

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS=±20V
VDS=V

GS，ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A

1.5 2.1 2.6 V
64 A

15.3 20

±100 nA

TJ=125°C 23.3 30
VGS=4.5V, ID=5A
VDS=5V, ID=10A
IS=1A,VGS=0V

22.7 32 mΩ
17 S

0.75 1 V

µA

mΩ

12 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

0.6 1.8 2.8 Ω

373 448 pF

67 pF
41 pF

SWITCHING PARAMETERS

Q

g

Q

gs

Q

gd

t

D(on)

t

r
D(off)

t

f

t

rr

Q

rr

A: The value of R
based on T
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.

Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time

Turn-Off Fall Time
Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device in a still air environment with TA=25°C. The power dissipation P

θJA

=150°C, using t ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to case R

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

VGS=4.5V, VDS=15V, ID=10A

VGS=10V, VDS=15V, RL=1.5Ω,

GEN

IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs

=150°C.

J(MAX)

and case to ambient.

θJC

7.1 8.6 nC

1.2 nC

1.6 nC

4.3 ns

2.8 ns

3 ns

10.5 12.6 ns

4.5

and current rating I

DSM

nC

DSM

are

Rev.8.0: November 2013 www.aosmd.com Page 2 of 6

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

125°C

6V

AON7408

60

10V

50

40

30

(A)

D

I

20

10

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics

40

35

30

Ω

Ω)

Ω

Ω

(m

25

DS(ON)

R

20

15

10

0 5 10 15 20

Figure 3: On-Resistance vs. Drain Current and Gate

VDS(Volts)

VGS=4.5V

VGS=10V

ID(A)

Voltage

4.5V

VGS=3.5V

15

VDS=5V

12

9

(A)

D

I

6

3

0

1.5 2 2.5 3 3.5 4 4.5

Figure 2: Transfer Characteristics

1.8

1.6

1.4

1.2

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175

VGS(Volts)

VGS=10V

Figure 4: On-Resistance vs. Junction Temperature

25°C

VGS=4.5V

Temperature (°C)

17

5
2

10

0

18

60

50

40

Ω

Ω)

Ω

Ω

(m

30

DS(ON)

R

20

10

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

125°C

25°C

VGS(Volts)

ID=10A

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

1.0E-04

1.0E-05

40

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics

VSD(Volts)

Rev.8.0: November 2013 www.aosmd.com Page 3 of 6