Alpha & Omega AON7403L Schematic [ru]

AON7403

30V

P-Channel MOSFET

General Description Product Summary

VDS ID (at VGS=-10V) -29A

R

DS(ON)

(at VGS=-10V) < 18mW

R

DS(ON)

(at VGS=-5V) < 36mW

100% UIS Tested

Symbol

V

DS

VGSIDMIAREARTJ, T

STG

Symbol

t ≤ 10s

Steady-State
Steady-State

R

qJC

Max

-30

°C/W

R

qJA

224730

Thermal Characteristics

Units

Parameter

Typ

5

Maximum Junction-to-Ambient

A

Drain-Source Voltage

V

Gate-Source Voltage

±25

V

Maximum Junction-to-Lead

The AON7403 uses advanced trench technology to
provide excellent R

DS(ON)

, and ultra-low low gate charge

with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications.

Maximum

Units

Parameter

Absolute Maximum Ratings TA=25°C unless otherwise noted

-30V

°C/W

°C/W

Maximum Junction-to-Ambient

A D

4.2

60

A

TC=100°C

-18

Pulsed Drain Current C-80

Continuous Drain
Current

TC=25°C

I

D

-29

A

TA=70°C

-8.5

Continuous Drain
Current

TA=25°C

I

DSM

-11

Power Dissipation

B

TC=25°C

P

D

25

W

TC=100°C

10

Avalanche Current C24

Junction and Storage Temperature Range

-55 to 150

°C

Power Dissipation

A

TA=25°C

P

DSM

4.1

A

Repetitive avalanche energy L=0.1mH

C

29

mJ

W

TA=70°C

2.6

DFN 3x3_EP

Top View Bottom View

Pin 1

Top View

S
S
S

G

D
D
D
D

1 2 3 4 8 7 6

5

G

D

S

Rev.4.0: November. 2013 www.aosmd.com Page 1 of 5

Symbol Min Typ Max Units

BV

DSS

-30 V

VDS=-30V, VGS=0V -1

TJ=55°C -5

I

GSS

100 nA

V

GS(th)

Gate Threshold Voltage

-1.7 -2.2 -3 V

I

D(ON)

-80 A

14 18

TJ=125°C 20 25

26 36

mW

g

FS

20 S

V

SD

-0.7 -1 V

I

S

-22 A

C

iss

1130 1400 pF

C

oss

240 pF

C

rss

155 pF

R

g

5.8 8 W

Qg(10V) 18 24 nC

Q

gs

5.5 nC

Q

gd

3.3 nC

t

D(on)

8.7 ns

t

r

8.5 ns

t

D(off)

18 ns

t

f

7 ns

t

rr 12 16 ns

Q

rr 26

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge

IF=-8A, dI/dt=500A/ms

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=1.8W,
R

GEN

=3W

mW

Forward Transconductance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=-10V, VDS=-15V, ID=-8A
Gate Source Charge

Gate Drain Charge

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

I

DSS

mA

Drain-Source Breakdown Voltage

On state drain current

ID=-250mA, VGS=0V

VGS=-10V, VDS=-5V

VGS=-10V, ID=-8A

Reverse Transfer Capacitance

IS=-1A,VGS=0V

VDS=-5V, ID=-8A

VGS=-5V, ID=-5A

Diode Forward Voltage

IF=-8A, dI/dt=500A/ms

VGS=0V, VDS=-15V, f=1MHz

SWITCHING PARAMETERS

VDS=0V, VGS= ±25V

Zero Gate Voltage Drain Current
Gate-Body leakage current

Body Diode Reverse Recovery Time

VDS=V

GS ID

=-250mA

R

DS(ON)

Static Drain-Source On-Resistance

A. The value of R

qJA

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation P

DSM

is based on R

qJA

t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on T

J(MAX)

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R

qJA

is the sum of the thermal impedence from junction to case R

qJC

and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev.4.0: November. 2013 www.aosmd.com Page 2 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5
2

10

0

18

40

0

20

40

60

80

1 2 3 4 5 6

-I

D

(A)

-VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

10

15

20

25

30

35

40

0 5 10 15 20

R

DS(ON)

(mW)

-ID (A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-I

S

(A)

-VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Normalized On-Resistance

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=-5V
ID=-5A

VGS=-10V
ID=-8A

10

20

30

40

50

2 4 6 8 10

R

DS(ON)

(mW)

-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

25°C

125°C

VDS=-5V

VGS=-5V

VGS=-10V

ID=-8A

25°

125°

0

20

40

60

80

0 1 2 3 4 5

-I

D

(A)

-VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

VGS=-4V

-4.5V

-10V

-6V

-8V

Rev.4.0: November. 2013 www.aosmd.com Page 3 of 5