Alpha & Omega AON7200 Schematic [ru]
V
Symbol
V
V
Absolute Maximum Ratings T
=25°C unless otherwise noted
Drain-Source Voltage
30
V
DS
A D
V
Drain-Source Voltage
30
A
AON7200
30V N-Channel MOSFET
General Description Product Summary
The AON7200 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Conduction and
switching losses are minimized due to an extremely low
combination of R
DS(ON)
and Crss.
DS
ID (at VGS=10V) 40A
R
R
(at VGS=10V) < 8mΩ
DS(ON)
(at VGS = 4.5V) < 11mΩ
DS(ON)
30V
100% UIS Tested
100% Rg Tested
Top View Bottom View
DFN 3x3 EP
A
Pin 1
Top View
1
2
3
4
8
7
6
5
G
D
S
Maximum UnitsParameter
V
GS
C
C
B
A
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
I
D
I
DM
I
DSM
IAS, I
C
EAS, E
P
D
P
DSM
TJ, T
AR
AR
STG
Continuous Drain
G
Current
Continuous Drain
Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range -55 to 150 °C
40
31
146Pulsed Drain Current
15.8
12.7
39
62
25
3.1
2
mJ
V±20Gate-Source Voltage
A
A
A28
W
W
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 5: Jul 2011 www.aosmd.com Page 1 of 6
Parameter Typ Max
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
30
60
1.6
40
75
2
Units
°C/W
°C/W
°C/W
tr2
ns
VGS=10V, V
=15V, R
=0.75
Ω
,
Turn-On Rise Time
Electrical Characteristics (TJ=25°C unless otherwise noted)
AON7200
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
30 V
VDS=30V, VGS=0V 1
TJ=55°C 5
VDS=0V, VGS= ±20V
VDS=V
GS ID
=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1.3 1.85 2.4 V
146 A
6.7 8
100 nA
TJ=125°C 9.2 11
VGS=4.5V, ID=15A
VDS=5V, ID=20A
IS=1A,VGS=0V
9 11 mΩ
60 S
0.7 1 V
µA
mΩ
30 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
870 1090 1300 pF
340 490 640 pF
22 38 53 pF
0.4 0.9 1.4 Ω
SWITCHING PARAMETERS
Qg(10V) 12 16 20 nC
Qg(4.5V) 5 7 9 nC
Q
gs
Q
gd
t
D(on)
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
Power dissipation P
application depends on the user's specific board design.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
θJA
is based on R
DSM
is the sum of the thermal impedence from junction to case R
θJA
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
θJA
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
J(MAX)
VGS=10V, VDS=15V, ID=20A
2 2.5 3 nC
1.5 2.5 3.5 nC
5 ns
DS
R
=3Ω
GEN
L
16 ns
2 ns
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and case to ambient.
θJC
10
20
13 16 ns
25 30
nC
Rev 5: Jul 2011 www.aosmd.com Page 2 of 6
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
125°C
(Note E)
125°C
125°C
(Note E)
AON7200
80
10V
60
(A)
40
D
I
20
0
0 1 2 3 4 5
Fig 1: On-Region Characteristics (Note E)
15
12
Ω
Ω)
Ω
Ω
9
(m
6
DS(ON)
R
3
0
0 5 10 15 20 25 30
Figure 3: On-Resistance vs. Drain Current and Gate
4.5V
VDS(Volts)
Voltage (Note E)
4V
VGS=3V
VGS=4.5V
VGS=10V
ID(A)
3.5V
50
VDS=5V
40
30
(A)
D
I
20
10
0
1 1.5 2 2.5 3 3.5 4
Figure 2: Transfer Characteristics (Note E)
1.6
1.4
1.2
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Figure 4: On-Resistance vs. Junction Temperature
VGS(Volts)
VGS=10V
ID=20A
Temperature (°C)
25°C
VGS=4.5V
ID=15A
0
18
40
35
30
25
Ω
Ω)
Ω
Ω
(m
20
DS(ON)
15
R
10
5
0
2 4 6 8 10
Figure 5: On-Resistance vs. Gate-Source Voltage
VGS(Volts)
(Note E)
25°C
ID=20A
1.0E+02
1.0E+01
1.0E+00
(A)
1.0E-01
S
I
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
25°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6: Body-Diode Characteristics (Note E)
VSD(Volts)
Rev 5: Jul 2011 www.aosmd.com Page 3 of 6
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