Alpha & Omega AON2240 Schematic [ru]

General Description Product Summary

V

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

V

Drain-Source Voltage

40

A D

A

V

AON2240

40V N-Channel MOSFET

The AON2240 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R

. This device is ideal for load switch

DS(ON)

and battery protection applications.

Pin 1

A

DFN 2x2B

D

S

S

Top View Bottom View

Parameter

Gate-Source Voltage
Continuous Drain

G

Current

TA=25°C
TA=100°C

C

TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

D

V
I

D

I

DM

P
TJ, T

DS

40V

ID (at VGS=10V) 8A
R
R

D

D

G

(at VGS =10V) < 21mΩ

DS(ON)

(at VGS =4.5V) < 29mΩ

DS(ON)

Pin 1

D

G

D

S

Maximum Units

DS
GS

±20

V
8
6

A

32Pulsed Drain Current

D

STG

2.8

1.8

-55 to 150

W
°C

Thermal Characteristics
Parameter

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

t ≤ 10s
Steady-State

Symbol

R

θJA

Typ Max

37
66 °C/W

45
80

Units

°C/W

www.aosmd.com Page 1 of 6

tr3

ns

VGS=10V, V

=20V, R

=2.5Ω,

Turn-On Rise Time

Electrical Characteristics (TJ=25°C unless otherwise noted)

AON2240

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

40 V

VDS=40V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS=±20V
VDS=V

GS，ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A

1.4 1.9 2.4 V
32 A

16.8 21

±100 nA

TJ=125°C 24.5 31
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V

22.6 29 mΩ
33 S

0.75 1 V

3.5 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

415 pF
112 pF

11 pF

1 2.2 3.5 Ω

SWITCHING PARAMETERS

Qg(10V) 6.5 12 nC
Qg(4.5V) 3 6 nC
Q

gs

Q

gd

t

D(on)

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
The Power dissipation P
given application depends on the user's specific board design.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Total Gate Charge
Total Gate Charge
Gate Source Charge

VGS=10V, VDS=20V, ID=8A

Gate Drain Charge
Turn-On DelayTime

Turn-Off DelayTime

R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

θJA

is the sum of the thermal impedance from junction to case R

θJA

is based on R

DSM

t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

IF=8A, dI/dt=100A/µs

IF=8A, dI/dt=100A/µs

1.2 nC

1.1 nC
4 ns

GEN

DS

=3Ω

L

15 ns

2 ns

12.5 ns

3.5

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and case to ambient.

θJC

nC

Rev 0 : Dec. 2011 www.aosmd.com Page 2 of 6

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Voltage (Note E)

(Note E)

Voltage (Note E)

(Note E)

AON2240

30

10V

4.5V

25

20

(A)

15

D

I

10

5

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

VDS(Volts)

50

40

Ω

Ω)

Ω

Ω

30

(m

20

DS(ON)

R

10

VGS=4.5V

VGS=10V

3.5V

3V

VGS=2.5V

20

VDS=5V

15

(A)

10

D

I

125°C

5

25°C

0

0 1 2 3 4 5 6

Figure 2: Transfer Characteristics (Note E)

VGS(Volts)

1.8

1.6

VGS=10V
ID=8A

1.4

1.2

1

Normalized On-Resistance

VGS=4.5V
ID=4A

0

0 4 8 12

Figure 3: On-Resistance vs. Drain Current and Gate

ID(A)

60

50

40

Ω

Ω)

Ω

Ω

(m

30

DS(ON)

R

20

10

25°C

0

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS(Volts)

(Note E)

ID=8A

125°C

0.8
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Temperature (°C)

1.0E+02

1.0E+01

(A)

1.0E+00

S

I

1.0E-01

125°C

1.0E-02

1.0E-03

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

VSD(Volts)

25°C

Rev 0: Dec 2011 www.aosmd.com Page 3 of 6