Alpha & Omega AOD480 Schematic [ru]
Symbol
Absolute Maximum Ratings T
=25°C unless otherwise noted
AOD480
G
S
D
G
S
D
Symbol
Typ
Max
Current
TC=100°C
A
A
18
A
I
D
30V N-Channel MOSFET
General Description
The AOD480 uses advanced trench technology and
design to provide excellent R
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VGS=10V, ID=18A
with low gate
DS(ON)
Features
VDS(V) = 30V
ID= 25A (VGS = 10V)
R
<23 mΩ (VGS= 10V)
DS(ON)
R
<33 mΩ (VGS = 4.5V)
DS(ON)
100% UIS Tested
100% Rg Tested
C
B
A
TO-252
D-PAK
TC=25°C
C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
Bottom View
A
G
Maximum Units
V
DS
V
GS
25
I
DM
I
AR
C
E
AR
P
D
P
DSM
TJ, T
STG
64Pulsed Drain Current
12
21
11
2.5
1.6
-55 to 175
Top View
Parameter
Drain-Source Voltage 30
Continuous Drain
G
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
1.4
D
S
V
V±20Gate-Source Voltage
A
7
mJ
W
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
t ≤ 10s
Steady-State
B
Steady-State
R
θJA
R
θJC
16.7 25
40 50
4.5 7
°C/W
°C/W
°C/W
AOD480
t
4.3
ns
Turn-On DelayTime
t
D(on)
4.3
ns
Turn-On DelayTime
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
VDS=0V, VGS= ±20V
VDS=V
GS ID
=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=8A
VDS=5V, ID=20A
IS=1A,VGS=0V
30 V
0.004 1
TJ=55°C 5
100 nA
1.5 2.1 2.6 V
64 A
18.5 23
TJ=125°C 26 32
25.4 33 mΩ
20 S
0.75 1 V
3.2 A
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
373 448 pF
67 pF
41 pF
2 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) 5.7 7.1 8.6 nC
Qg(4.5V) 2.7 3.5 4.2 nC
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=10V, VDS=15V, ID=20A
1.2 nC
1.6 nC
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
Power dissipation P
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. The maximum current is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST2008).
Rev3: May. 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
θJA
is based on R
DSM
is the sum of the thermal impedence from junction to case R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
θJA
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=175°C.
J(MAX)
VGS=10V, VDS=15V, RL=0.75Ω,
R
=3Ω
GEN
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
=175°C.
J(MAX)
and case to ambient.
θJC
2.8 ns
15.8 ns
3 ns
8.4 10.5 12.6
ns
3.6 4.5 5.4 nC
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD480
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
25°C
125°C
25°C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
6V
40
30
(A)
D
I
20
VGS=3.5V
10
0
0 1 2 3 4 5
VDS(Volts)
Fig 1: On-Region Characteristics
35
VGS=4.5V
30
Ω
Ω)
Ω
Ω
(m
25
DS(ON)
R
20
VGS=10V
4.5V
16
12
8
(A)
D
I
4
VDS=5V
125°C
25°C
0
1.5 2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
1.8
VGS=10V
1.6
1.4
ID=20A
VGS=4.5V
1.2
1
Normalized On-Resistance
ID=8A
15
15
0 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and
0.8
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage
60
1.0E+01
ID=20A
50
40
Ω
Ω)
Ω
Ω
(m
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
DS(ON)
R
20
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
125°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
1.0E-04
10
2 4 6 8 10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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