Alpha & Omega AOD210 Schematic [ru]

General Description Product Summary

V

A

C

C

A

AOD210

30V N-Channel MOSFET

The AOD210 uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
R

DS(ON)

and C

.In addition, switching behavior is well

rss

DS

ID (at VGS=10V)

R

R

(at VGS=10V)

DS(ON)

(at VGS = 4.5V)

DS(ON)

30V
70A

< 3mΩ

< 4mΩ

controlled with a “Schottky style” soft recovery body diode.

100% UIS Tested
100% R

TO252
DPAK

Top View

D

G

Absolute Maximum Ratings T

Bottom View

D

S

=25°C unless otherwise noted

A

G

S

Symbol

Drain-Source Voltage 30

Continuous Drain

Current

G

Pulsed Drain Current

Continuous Drain
Current

TC=25°C

=100°C

T

C

C

=25°C

T

A

T

=70°C

A

Avalanche Current

Avalanche energy L=0.1mH

=25°C

T

C

Power Dissipation

Power Dissipation

B

=100°C

C

T

=25°C

A

A

T

=70°C

A

Junction and Storage Temperature Range -55 to 175 °C

V

DS

V

GS

I

D

I

DM

I

DSM

IAS, I

EAS, E

P

D

P

DSM

TJ, T

AR

AR

STG

Tested

g

Maximum UnitsParameter

70

55

390

23

18

231

150

75T

2.7

1.7

D

G

S

mJ

W

W

V

V±20Gate-Source Voltage

A

A

A68

Thermal Characteristics

Parameter Typ Max

Maximum Junction-to-Ambient

Maximum Junction-to-Case

D

t ≤ 10s

Steady-State

Steady-State

Symbol

R

θJA

R

θJC

14.2
39

0.8

17
47

1

Units

°C/W
°C/WMaximum Junction-to-Ambient
°C/W

Rev0 : May 2010 www.aosmd.com Page 1 of 6

Ω

A

AOD210

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage
Maximum Body-Diode Continuous Current

I

=250µA, VGS=0V

D

V

=30V, VGS=0V

DS

=0V, VGS= ±20V

V

DS

V

DS=VGS ID

V

GS

V

GS

V

GS

V

DS

=1A,VGS=0V

I

S

G

=250µA

=10V, VDS=5V

=10V, ID=20A

=4.5V, ID=20A

=5V, ID=20A

T

J

=125°C

T

J

=55°C

30 V

1

5

µA

100 nA

1 1.7 2.2 V

390 A

2.4 3

3.7 4.7

2.95 3.9

mΩ

m

78 S

0.65 1 V

70 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

V

=0V, VDS=15V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

2800 3520 4300 pF

920 1320 1720 pF

50 90 155 pF

0.5 1 1.5 Ω

SWITCHING PARAMETERS

(10V)

Q

g

(4.5V)

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

. The value of R

Power dissipation P
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
T

=25°C.

J

D. The R

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in

Total Gate Charge

Total Gate Charge

Gate Source Charge

V

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

V
R

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

θJA

is based on R

DSM

is based on T

D

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends on

θJA

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=175°C. The SOA curve provides a single pulse rating.

J(MAX)

I

I

2

FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

=10V, VDS=15V, ID=20A

GS

=10V, VDS=15V, RL=0.75Ω,

GS

=3Ω

GEN

=20A, dI/dt=500A/µs

F

=20A, dI/dt=500A/µs

F

=175°C. Ratings are based on low frequency and duty cycles to keep initial

J(MAX)

and case to ambient.

θJC

39 48 58 nC

17 22 27 nC

7 9 11 nC

4 7 10 nC

11 ns

10 ns

38 ns

10 ns

14

40

21 28 ns

58 76

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0 : May 2010 www.aosmd.com Page 2 of 6

S

C

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

AOD210

100

80

10V
7V

3.5V 3V

60

(A)

D

I

40

20

Vgs=2.5V

0

012345

(Volts)

V

DS

Fig 1: On-Region Characteristics (Note E)

8

6

)

Ω

(m

DS(ON)

R

4

VGS=4.5V

2

VGS=10V

0

0 5 10 15 20 25 30

(A)

I

D

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

100

VDS=5V

80

60

(A)

D

I

40

125°C

20

0

1 1.5 2 2.5 3 3.5 4

(Volts)

V

GS

Figure 2: Transfer Characteristics (Note E)

2

Normalized On-Resistance

1.8

1.6

1.4

1.2

1

VGS=10V
I

=20A

D

VGS=4.5V
I

=15A

D

0.8

0 25 50 75 100 125 150 175 200

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

25°C

17

5
2

10

0

18

)

Ω

(m

DS(ON)

R

8

ID=20A

6

125°C

4

2

25°C

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

40

°

25°

1.0E-05

0

246810

V

(Volts)

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

(Volts)

SD

Figure 6: Body-Diode Characteristics (Note E)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Rev 0: May 2010 www.aosmd.com Page 3 of 6