Alpha & Omega AO7403L Schematic [ru]
A
A
AO7403
p
w
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7403 uses advanced trench technology to provide
excellent R
voltages as low as 1.8V, in the small SOT323 footprint. It can
be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. It is ESD protected to 2KV HBM. Standard Product
, low gate charge, and operation with gate
DS(ON)
Features
VDS (V) = -20V
I
= -0.7A (VGS = -4.5V)
D
R
DS(ON)
R
DS(ON)
R
DS(ON)
AO7403 is Pb-free (meets ROHS & Sony 259 specifications).
AO7403L is a Green Product ordering option. AO7403 and
AO7403L are electrically identical.
SC-70
(SOT-323)
To
Vie
G
S
Absolute Maximum Ratings T
D
=25°C unless otherwise noted
A
Symbol
Drain-Source Voltage -20
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
T
A
=25°C
=70°C
TA=25°C
Power Dissipation
A
=70°C
T
A
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
G
Maximum UnitsParameter
-0.7
-0.5
-3
0.35
0.22
-55 to 150
< 470mΩ (VGS = -4.5V)
< 625mΩ (VGS = -2.5V)
< 900mΩ (VGS = -1.8V)
D
S
V
V±8Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
300 360
350 425
280 320
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO7403
µ
Ω
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage I
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
V
Gate Threshold Voltage V
On state drain current V
V
Static Drain-Source On-Resistance
V
V
Forward Transconductance
Diode Forward Voltage
V
I
Maximum Body-Diode Continuous Current
=-250µA, VGS=0V
D
=-16V, VGS=0V
DS
=0V, VGS=±8V
DS
DS=VGS ID
=-4.5V, VDS=-5V
GS
=-4.5V, ID=-0.7A
GS
=-2.5V, ID=-0.6A
GS
=-1.8V, ID=-0.5A
GS
=-5V, ID=-0.7A
DS
=-0.5A,VGS=0V
S
=-250µA
=55°C
T
J
=125°C
T
J
-20 V
-1
-5
µA
±10
-0.5 -0.6 -0.9 V
-3 A
388 470
542 660
519 625
666 900
mΩ
m
m
1.7 S
-0.86 -1 V
-0.4 A
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
V
=0V, VDS=-10V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
GS
114 pF
17 pF
14 pF
12 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
=-4.5V, VDS=-10V, ID=-0.7A
GS
Turn-On DelayTime
=-4.5V, VDS=-10V,
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=14.3Ω, R
R
L
GEN
=3Ω
Turn-Off Fall Time
=-0.7A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
I
F
=-0.7A, dI/dt=100A/µs
I
F
1.44 nC
0.14 nC
0.35 nC
6.5 ns
6.5 ns
18.2 ns
5.5 ns
10
ns
3nC
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev4: Aug 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
Loading...