Alpha & Omega AO 6420 Service Manual
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AO6420
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6420 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6420 is Pb-free
(meets ROHS & Sony 259 specifications).
and low gate charge. This
DS(ON)
Features
VDS (V) = 60V
I
= 4.2A (VGS = 10V)
D
R
R
< 60mΩ (VGS = 10V)
DS(ON)
< 75mΩ (VGS = 4.5V)
DS(ON)
Rg,Ciss,Coss,Crss Tested!
TSOP-6
Top View
1
D
D
G
Absolute Maximum Ratings T
Parameter Maximum Units
Drain-Source Voltage 60
Gate-Source Voltage ±20
Continuous Drain
Current
A,F
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range -55 to 150 °C
6
D
2
3
D
5
S
4
=25°C unless otherwise noted
A
G
Symbol
V
DS
V
GS
TA=25°C
T
=70°C 3.4
A
B
T
=25°C
A
T
=70°C 1.28
A
I
D
I
DM
P
D
TJ, T
STG
D
S
V
V
4.2
A
20
2.00
W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
48 62.5
74 110
35 40
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO6420
Ω
N Channel Electrical Characteristics (T
Symbol Min Typ Max Units
Parameter Conditions
=25°C unless otherwise noted)
J
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
=60V, VGS=0V
V
Zero Gate Voltage Drain Current
Gate-Body leakage current V
Gate Threshold Voltage V
On state drain current V
DS
=0V, VGS= ±20V
DS
DS=VGS ID
=10V, VDS=5V
GS
V
=10V, ID=4.2A
GS
=250µA
Static Drain-Source On-Resistance
=4.5V, ID=3A
V
GS
V
Forward Transconductance
Diode Forward Voltage
=5V, ID=4.2A
DS
I
=1A,VGS=0V
S
Maximum Body-Diode Continuous Current
T
=55°C
J
T
=125°C
J
60 V
1
5
µA
100 nA
1 2.3 3 V
20 A
50 60
85
60 75
mΩ
m
13 S
0.78 1 V
3A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
=0V, VDS=30V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
V
GS
450 540 pF
60 pF
25 pF
1.65 2 Ω
SWITCHING PARAMETERS
(10V)
Q
g
Q
(4.5V)
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev0: Feb. 2007
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
θJA
is the sum of the thermal impedence from junction to lead R
θJA
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
V
=10V, VDS=30V, ID=4.2A
GS
=10V, VDS=30V, RL=7Ω,
V
GS
=3Ω
R
GEN
=4.2A, dI/dt=100A/µs
I
F
=4.2A, dI/dt=100A/µs
I
F
and lead to ambient.
θJL
9.5 11.5 nC
4.3 5.5 nC
1.6 nC
2.2 nC
5.1 7 ns
2.6 4 ns
15.9 20 ns
23ns
25.1 35
ns
28.7 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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