Alpha & Omega AO 6419 Service Manual
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p
AO6419
A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6419 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6419 is Pb-free
(meets ROHS & Sony 259 specifications). AO6419L
is a Green Product ordering option. AO6419 and
with low gate charge. This
DS(ON)
Features
VDS (V) = -30V
I
= -5 A (VGS = -10V)
D
R
R
R
< 52mΩ (VGS = -10V)
DS(ON)
< 87mΩ (VGS = -4.5V)
DS(ON)
< 110mΩ (VGS = -3.5V)
DS(ON)
O6419L are electrically identical.
D
TSOP6
Top View
1
D
D
G
Absolute Maximum Ratings T
Drain-Source Voltage -30
=25°C
B
T
A
T
A
=70°C
Continuous Drain
Current
A
Pulsed Drain Current
TA=25°C
Power Dissipation
A
=70°C
T
A
Junction and Storage Temperature Range
6
D
D
2
5
S
3
4
=25°C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
G
S
Maximum UnitsParameter
-5
-4.2
-20
2
1.4
-55 to 150
V
V±20Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
47.5 62.5
74 110
37 50
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6419
Ω
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=-250µA, VGS=0V
D
V
=-24V, VGS=0V
DS
V
=0V, VGS=±20V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
GS
V
DS
I
=-1A,VGS=0V
S
=-250µA
=-4.5V, VDS=-5V
=-10V, ID=5.0A
=-4.5V, ID=-4A
=-3.5V, ID=-1A
=-5V, ID=-5A
=55°C
T
J
=125°C
T
J
-30 V
-1
-5
µA
±100 nA
-1 -1.8 -3 V
-20 A
39 52
54 70
67 87
85 110
mΩ
m
m
6 8.6 S
-0.77 -1 V
-2.8 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=-15V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
700 840 pF
120 pF
75 pF
10 15 Ω
SWITCHING PARAMETERS
(10V)
Q
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
(4.5V)
g
gs
gd
rr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
=-10V, VDS=-15V, ID=-5A
V
GS
=-10V, VDS=-15V, RL=3Ω,
V
GS
R
=3Ω
GEN
I
=-5A, dI/dt=100A/µs
F
I
=-5A, dI/dt=100A/µs
F
14.7 18 nC
7.6 9.5 nC
2nC
3.8 nC
8.3 ns
5ns
29 ns
14 ns
23.5 30
ns
13.4 nC
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 0: Nov 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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