Alpha & Omega AO 6415 Service Manual
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AO6415
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6415 uses advanced trench technology to provide
excellent R
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product AO6415 is Pb-free (meets ROHS & Sony
259 specifications). AO6415L is a Green Product ordering
option. AO6415 and AO6415L are electrically identical.
Absolute Maximum Ratings T
Drain-Source Voltage -20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
, low gate charge and operation with gate
DS(ON)
TSOP6
Top View
1
D
D
G
6
D
D
2
5
S
3
4
=25°C unless otherwise noted
A
Symbol
V
V
=25°C
T
A
I
D
I
DM
P
A
=70°C
T
A
B
TA=25°C
=70°C
T
A
TJ, T
DS
GS
D
STG
Features
VDS (V) = -20V
I
= -3.3A (VGS = -10V)
D
R
DS(ON)
R
< 100mΩ (VGS = -4.5V)
DS(ON)
R
< 150mΩ (VGS = -2.5V)
DS(ON)
ESD Rating: 2000V HBM
Maximum UnitsParameter
-3.3
-2.7
-14
1.25
0.8
-55 to 150
< 75mΩ (VGS = -10V)
D
G
S
V
V±12Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
82 100
111 140
56 70
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6415
µ
µ
Ω
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=-250µA, VGS=0V
D
V
=-16V, VGS=0V
DS
=0V, VGS=±10V
V
DS
=0V, VGS=±12V
V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
GS
V
DS
I
=-1A,VGS=0V
S
=-250µA
=-4.5V, VDS=-5V
=-10V, ID=-3.3A
=-4.5V, ID=-2A
=-2.5V, ID=-1A
=-5V, ID=-3.3A
=55°C
T
J
=125°C
T
J
-20 V
-0.003 -0.5
-2.5
µA
±1
±10
-0.6 -0.9 -1.4
-20 A
62 75
84 105
80 100
115 150
mΩ
m
m
7S
-0.65 -0.82 -1 V
-1.5 A
A
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=-10V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
512 620 pF
77 pF
62 pF
9.2 13 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
=-4.5V, VDS=-10V, ID=-2A
V
GS
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V
=-4.5V, VDS=-10V, RL=5Ω,
GS
R
=3Ω
GEN
Turn-Off Fall Time
=-2A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
I
F
I
=-2A, dI/dt=100A/µs
F
4.9 6 nC
0.8 nC
1.2 nC
11 13 ns
810ns
34 41 ns
12 15 ns
13 17
ns
46nC
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 0 : Nov 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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