Alpha & Omega AO6414L Schematic [ru]

Symbol

Symbol

Typ

Max

A

A

B

Absolute Maximum Ratings T

=25°C unless otherwise noted

AO6414

V

1

2

3

4

5

6

Pin1

55V N-Channel MOSFET

General Description

The AO6414 uses advanced trench technology to
provide excellent R

offers operation over a wide gate drive range from

2.5V to 12V. This device is suitable for use as a load
switch.

TSOP6

Top View Bottom View

and low gate charge. It

DS(ON)

D
D D

G

Top View

Product Summary

(V) = 55V

DS

ID = 2.4A (V
R
R

< 160mΩ (VGS = 4.5V)

DS(ON)

< 200mΩ (VGS = 2.5V)

DS(ON)

D

S

= 4.5V)

GS

G

D

S

A

Parameter Maximum Units

Drain-Source Voltage 55 V
Gate-Source Voltage ±12 V
Continuous Drain
Current

A

TA=25°C
TA=70°C

Pulsed Drain Current

TA=25°C

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

2.3

1.9
9

1.56

1.1

A

W

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

t ≤ 10s
Steady-State
Steady-State

R

θJA

R

θJL

58 80
94 120
37 50

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AO6414

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=10mA, VGS=0V
VDS=44V, VGS=0V

VDS=0V, VGS=±12V
VDS=V

GS ID

=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=2.4A

VGS=2.5V, ID=1.5A
VDS=5V, ID=2.4A
IS=1A

55 V

0.002 1

TJ=55°C 5

±100 nA

0.6 1.3 2 V
10 A

125 160

TJ=125°C 175 210

157 200 mΩ

11 S

0.78 1 V

1.9 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

214 300 pF

31 pF

12.6 pF

1.3 3 Ω

SWITCHING PARAMETERS

Q
Q
Q
t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g
gs
gd

Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=4.5V, VDS=25V, ID=2.4A

Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime

VGS=10V, VDS=25V, RL=10.4Ω,
R

=3Ω

GEN

Turn-Off Fall Time
Body Diode Reverse Recovery Time

rr

Body Diode Reverse Recovery Charge

IF=2.4A, dI/dt=100A/µs
IF=2.4A, dI/dt=100A/µs

2.6 3.3 nC

0.6 nC

0.8 nC

2.3 ns

2.4 ns

16.5 ns
2 ns

20 30

ns

17 nC

A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.

Rev1: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.