Alpha & Omega AO 6414 Service Manual

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AO6414

A

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO6414 uses advanced trench technology to
provide excellent R

offers operation over a wide gate drive range from

2.5V to 12V. This device is suitable for use as a load

switch. Standard product AO6414 is Pb-free (meets

ROHS & Sony 259 specifications). AO6414L is a
Green Product ordering option. AO6414 and

O6414L are electrically identical.

and low gate charge. It

DS(ON)

TSOP-6

Top View

6

1

D
D
G

D

5

2

D

4

3

S

Features

VDS (V) = 55V

= 2.4A (V

I

D

R
R

< 160mΩ (VGS = 4.5V)

DS(ON)

< 200mΩ (VGS = 2.5V)

DS(ON)

G

= 4.5V)

GS

D

S

Absolute Maximum Ratings T
Parameter Maximum Units

Drain-Source Voltage 55 V

Gate-Source Voltage ±12 V

Continuous Drain

Current

A

Pulsed Drain Current

Power Dissipation

TA=25°C

T

=70°C 1.9

A

B

=25°C

T

A

=70°C 1.1

T

A

Junction and Storage Temperature Range -55 to 150 °C

=25°C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

2.3

9

1.56

A

W

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s

Steady-State

Steady-State °C/W

Symbol Typ Max

R

θJA

R

θJL

58 80

94 120
37 50

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

AO6414

Ω

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage I

Zero Gate Voltage Drain Current

V

Gate-Source leakage current V
Gate Threshold Voltage V
On state drain current V

V

Static Drain-Source On-Resistance

V
Forward Transconductance V
Diode Forward Voltage I
Maximum Body-Diode Continuous Current

=10mA, VGS=0V

D

=44V, VGS=0V

DS

=0V, VGS=±12V

DS

DS=VGS ID

=4.5V, VDS=5V

GS

=4.5V, ID=2.4A

GS

=2.5V, ID=1.5A

GS

=5V, ID=2.4A

DS

=1A

S

=250μA

T

=55°C 5

J

=125°C 175 210

T

J

55 V

0.002 1
μA

±100 nA

0.6 1.3 2 V
10 A

125 160

157 200

mΩ

m

11 S

0.78 1 V

1.9 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V

=0V, VDS=25V, f=1MHz

V

GS

=0V, VDS=0V, f=1MHz

GS

214 300 pF

31 pF

12.6 pF

1.3 3 Ω

SWITCHING PARAMETERS

Q
Q
Q
t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

gs

gd

rr

Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

=4.5V, VDS=25V, ID=2.4A

V

GS

=10V, VDS=25V, RL=10.4Ω,

V

GS

R

=3Ω

GEN

=2.4A, dI/dt=100A/μs

I

F

I

=2.4A, dI/dt=100A/μs

F

2.6 3.3 nC

0.6 nC

0.8 nC

2.3 ns

2.4 ns

16.5 ns
2ns

20 30

ns

17 nC

A: The value of R
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.

Rev0: Nov. 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.