Alpha & Omega AO 6409 L, AO 6409 Service Manual
www.DataSheet4U.com
p
AO6409, AO6409L ( Green Product )
A
P-Channel Enhancement Mode Field Effect Transistor
Rev 2: Nov 2004
General Description
The AO6409 uses advanced trench technology to provide
excellent R
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
O6409L ( Green Product ) is offered in a lead-free
package.
Absolute Maximum Ratings T
Drain-Source Voltage -20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
, low gate charge and operation with gate
DS(ON)
TSOP6
Top View
6
1
D
D
G
D
D
5
2
S
4
3
=25°C unless otherwise noted
A
Symbol
V
V
=25°C
T
A
I
D
I
DM
P
A
=70°C
T
A
B
TA=25°C
=70°C
T
A
TJ, T
DS
GS
D
STG
Features
VDS (V) = -20V
I
= -5 A
D
R
DS(ON)
R
< 56mΩ (VGS = -2.5V)
DS(ON)
R
< 75mΩ (VGS = -1.8V)
DS(ON)
ESD Rating: 3000V HBM
G
Maximum UnitsParameter
-5.0
-4.2
-30
2
1.28
-55 to 150
< 45mΩ (VGS = -4.5V)
D
S
V
V±8Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
47.5 62.5
74 110
37 50
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6409, AO6409L
µ
µ
Ω
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=-250µA, VGS=0V
D
V
=-16V, VGS=0V
DS
V
=0V, VGS=±4.5V
DS
V
=0V, VGS=±8V
DS
DS=VGS ID
V
=-4.5V, VDS=-5V
GS
V
=-4.5V, ID=-5A
GS
V
=-2.5V, ID=-4A
GS
V
=-1.8V, ID=-2A
GS
=-5V, ID=-5A
V
DS
=-1A,VGS=0V
I
S
=-250µA
T
=55°C
J
T
=125°C
J
-20 V
-1
-5
±1
±10
µA
A
A
-0.3 -0.55 -1
-25 A
37 45
48 60
46 56
57 75
mΩ
m
m
816 S
-0.78 -1 V
-2.2 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
V
=0V, VDS=-10V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
GS
1450 pF
205 pF
160 pF
6.5 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
=-4.5V, VDS=-10V, ID=-5A
GS
V
=-4.5V, VDS=-10V, RL=2.0Ω,
GS
=3Ω
R
GEN
I
=-5A, dI/dt=100A/µs
F
=-5A, dI/dt=100A/µs
I
F
17.2 nC
1.3 nC
4.5 nC
9ns
14 ns
91 ns
31 ns
33
ns
14 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
Loading...