Alpha & Omega AO 6408 Service Manual
www.DataSheet4U.com
AO6408
A
A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6408 uses advanced trench technology to
provide excellent R
operation over a wide gate drive range from 1.8V to
12V. It is ESD protected. This device is suitable for
use as a load switch. Standard product AO6408 is Pb-
free (meets ROHS & Sony 259 specifications).
O6408L is a Green Product ordering option.
O6408 and AO6408L are electrically identical.
and low gate charge. It offers
DS(ON)
TSOP-6
Top View
6
1
D
2
D
3
G
D
5
D
4
S
Features
VDS (V) = 20V
= 8.8A (V
I
D
R
R
R
R
< 18mΩ (VGS = 10V)
DS(ON)
< 20mΩ (VGS = 4.5V)
DS(ON)
< 25mΩ (VGS = 2.5V)
DS(ON)
< 32mΩ (VGS = 1.8V)
DS(ON)
ESD Rating: 2000V HBM
G
= 10V)
GS
D
S
Absolute Maximum Ratings T
Parameter Maximum Units
Drain-Source Voltage 20 V
Gate-Source Voltage ±12 V
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
TA=25°C
=70°C 7
T
A
B
T
=25°C
A
=70°C 1.28
T
A
Junction and Storage Temperature Range -55 to 150 °C
=25°C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
8.8
40
2
A
W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
47.5 62.5
74 110
37 40
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
BV
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
GSO
Drain-Source Breakdown Voltage I
Zero Gate Voltage Drain Current
V
Gate-Source leakage current V
VDS=0V, IG=±250uAGate-Source Breakdown Voltage
Gate Threshold Voltage V
On state drain current V
V
Static Drain-Source On-Resistance
V
V
V
Forward Transconductance V
Diode Forward Voltage I
Maximum Body-Diode Continuous Current
=250µA, VGS=0V
D
=16V, VGS=0V
DS
=0V, VGS=±10V
DS
DS=VGS ID
=4.5V, VDS=5V
GS
=10V, ID=8.8A
GS
=4.5V, ID=8A
GS
=2.5V, ID=6A
GS
=1.8V, ID=4A
GS
=5V, ID=8.8A
DS
=1A
S
=250µA
=55°C
T
J
=125°C
T
J
20 V
10
25
±10
µA
µA
±12 V
0.5 0.75 1 V
40 A
14.4 18
18.5 23
16 20
20.5 25
25.6 32
mΩ
mΩ
m
m
33 S
0.72 1 V
3A
Ω
Ω
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=10V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
1810 2200 pF
232 pF
200 pF
1.6 2.2 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
=4.5V, VDS=10V, ID=8.8A
V
GS
Turn-On DelayTime
=10V, VDS=10V, RL=1.1Ω,
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=3Ω
R
GEN
Turn-Off Fall Time
=8.8A, dI/dt=100A/µs
I
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
F
=8.8A, dI/dt=100A/µs
I
F
17.9 22 nC
1.5 nC
4.7 nC
3.3 ns
5.9 ns
44 ns
7.7 ns
22 27
ns
9.8 nC
A: The value of R
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
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