Alpha & Omega AO 6405 Service Manual
www.DataSheet4U.com
p
AO6405
A
P-Channel Enhancement Mode Field Effect Transistor
ug 2002
General Description
The AO6405 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications.
Absolute Maximum Ratings T
Drain-Source Voltage -30
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
Junction and Storage Temperature Range
with low gate charge. This
DS(ON)
TSOP6
Top View
1
6
D
D
2
5
S
3
4
=25°C unless otherwise noted
A
B
T
A
T
A
D
D
G
=25°C
=70°C
TA=25°C
=70°C
T
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
Features
VDS (V) = -30V
I
= -5 A
D
R
R
< 52mΩ (VGS = -10V)
DS(ON)
< 87mΩ (VGS = -4.5V)
DS(ON)
G
Maximum UnitsParameter
-4.2
-20
1.4
-55 to 150
D
S
-5
2
V
V±20Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
47.5 62.5
74 110
37 50
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6405
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=-250µA, VGS=0V
D
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=5.0A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C
TJ=125°C
-30 V
-1
-5
µA
±100 nA
-1 -1.8 -3 V
-10 A
39 52
54 70
67 87
mΩ
m
6 8.6 S
-0.77 -1 V
-2.8 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
700 pF
120 pF
75 pF
10 Ω
SWITCHING PARAMETERS
Qg (10V)
Qg (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3Ω,
R
=3Ω
GEN
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
14.7 nC
7.6 nC
2nC
3.8 nC
8.3 ns
5ns
29 ns
14 ns
23.5
ns
13.4 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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