Alpha & Omega AO 6404 Service Manual
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AO6404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6404 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
Standard Product AO6404 is Pb-free (meets ROHS
& Sony 259 specifications). AO6404L is a Green
Product ordering option. AO6404 and AO6404L are
electrically identical.
D
D
G
Absolute Maximum Ratings T
Drain-Source Voltage 20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
Junction and Storage Temperature Range
, low gate charge and
DS(ON)
rating. It is ESD protected.
TSOP-6
Top View
1
6
D
2
5
D
3
4
S
=25°C unless otherwise noted
A
=25°C
T
A
=70°C
T
A
B
TA=25°C
=70°C
T
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
Features
VDS (V) = 20V
I
= 8.6A (VGS = 10V)
D
R
R
R
R
ESD Rating: 2000V HBM
G
< 17mΩ (VGS = 10V)
DS(ON)
< 18mΩ (VGS = 4.5V)
DS(ON)
< 24mΩ (VGS = 2.5V)
DS(ON)
< 33mΩ (VGS = 1.8V)
DS(ON)
D
S
Maximum UnitsParameter
8.6
6.8
30
2
1.28
-55 to 150
V
V±12Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
45 62.5
70 110
33 50
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6404
µ
Ω
Ω
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
BV
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
GSO
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate-Source Breakdown Voltage V
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=250µA, VGS=0V
D
V
=16V, VGS=0V
DS
V
=0V, VGS=±10V
DS
=0V, IG=±250uA
DS
V
DS=VGS ID
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
=250µA
=4.5V, VDS=5V
=10V, ID=8.5A
=4.5V, ID=5A
=2.5V, ID=4A
=1.8V, ID=3A
=5V, ID=8A
IS=1A,VGS=0V
=55°C
T
J
=125°C
T
J
20 V
10
25
µA
10
±12 V
0.5 0.75 1 V
30 A
13.4 17
16 20
14.8 18
18.8 24
25.5 33
mΩ
m
m
m
36 S
0.73 1 V
2.9 A
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
=0V, VDS=10V, f=1MHz
Output Capacitance
V
GS
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
1810 pF
232 pF
200 pF
1.6 Ω
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
θJA
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
V
=4.5V, VDS=10V, ID=8.5A
GS
=10V, VDS=10V, RL=1.2Ω,
V
GS
R
=3Ω
GEN
=8.5A, dI/dt=100A/µs
I
F
=8.5A, dI/dt=100A/µs
I
F
and lead to ambient.
θJL
17.9 nC
1.5 nC
4.7 nC
2.5 ns
7.2 ns
49 ns
10.8 ns
22
ns
9.8 nC
=25°C. The
A
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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