Alpha & Omega AO 6402 L, AO 6402 Service Manual

www.DataSheet4U.com

Rev 3:Nov 200

4

AO6402, AO6402L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO6402 uses advanced trench technology to
provide excellent R

device may be used as a load switch or in PWM
applications. AO6402L ( Green Product ) is offered in
a lead-free package.

TSOP-6

Top View

D
D
G

Absolute Maximum Ratings T
Parameter Maximum Units

Drain-Source Voltage 30 V

Gate-Source Voltage ±20 V

Continuous Drain

Current

A

Pulsed Drain Current

Power Dissipation

Junction and Storage Temperature Range -55 to 150 °C

and low gate charge. This

DS(ON)

6

1
2
3

D

5

D

4

S

=25°C unless otherwise noted

A

Symbol

V

DS

V

GS

TA=25°C

T

=70°C 5.8

A

B

T

=25°C

A

T

=70°C 1.44

A

I

D

I

DM

P

D

TJ, T

STG

Features

VDS (V) = 30V

= 6.9A

I

D

R

DS(ON)

R

DS(ON)

D

G

S

< 28mΩ (VGS = 10V)

< 42mΩ (VGS = 4.5V)

6.9

20

2

A

W

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Typ Max

R

θJA

R

θJL

48 62.5
74 110
35 40

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AO6402, AO6402L

Ω

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage ID=250µA, VGS=0V

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

Gate-Body leakage current VDS=0V, VGS=±20V

Gate Threshold Voltage VDS=V

GS ID

=250µA

On state drain current VGS=4.5V, VDS=5V

VGS=10V, ID=6.9A

Static Drain-Source On-Resistance

VGS=4.5V, ID=5.0A

Forward Transconductance VDS=5V, ID=6.9A

Diode Forward Voltage IS=1A
Maximum Body-Diode Continuous Current

TJ=55°C

TJ=125°C

30 V

1

5

µA

100 nA

1 1.9 3 V

20 A

22.5 28

31.3 38

34.5 42

mΩ

m

10 15.4 S

0.76 1 V

3A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

VGS=0V, VDS=15V, f=1MHz

Reverse Transfer Capacitance

Gate resistance VGS=0V, VDS=0V, f=1MHz

680 820 pF

102 pF

77 pF

3 3.6 Ω

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=10V, VDS=15V, ID=6.9A

=10V, VDS=15V, RL=2.2Ω,

V

GS

R

=3Ω

GEN

=6.9A, dI/dt=100A/µs

I

F

IF=6.9A, dI/dt=100A/µs

13.84 16.7 nC

6.74 8.1 nC

1.82 nC

3.2 nC

4.6 ns

4.1 ns

20.6 ns

5.2 ns

16.5

20 ns

7.8 nC

A: The value of R
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

θJA

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.