Alpha & Omega AO6402A Schematic [ru]

AO6402A

1

2

3

6

5

4

Symbol

Symbol

Typ

Max

A

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

A

30V N-Channel MOSFET

General Description

The AO6402A uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.

Top View Bottom View

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current

A,F

Pulsed Drain Current

Power Dissipation
Junction and Storage Temperature Range

and low gate charge. This

DS(ON)

TSOP6

Pin1

TA=25°C
TA=70°C

B

TA=25°C
TA=70°C

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

Product Summary

VDS(V) = 30V
ID= 7.5A (VGS= 10V)
R
R

D
D D

G

< 24mΩ (VGS= 10V)

DS(ON)

< 35mΩ (VGS= 4.5V)

DS(ON)

Top View

D

S

Maximum UnitsParameter

30

7.5

6.0
64

2.0

1.28

-55 to 150

D

G

S

V
V±20

A

W
°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

t ≤ 10s

Steady-State

C

Steady-State

R

θJA

R

θJL

48 62.5
74 110
54 68

°C/W
°C/W
°C/W

AO6402A

t

4.5

6.5nsTurn-On DelayTime

t

D(on)

4.5

6.5

ns

Turn-On DelayTime

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V
VDS=30V, VGS=0V

VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.5A

VGS=4.5V, ID=5.6A
VDS=5V, ID=7.5A
IS=1A,VGS=0V

30 V

TJ=55°C 5

100 nA

1.5 2.1 2.6 V
64 A

17.3 24

TJ=125°C 25 34

25 35 mΩ
20 S

0.75 1 V

2.5 A

1

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

373 448 pF

67 pF
41 pF

2 2.8 Ω

SWITCHING PARAMETERS

Qg(10V) 7.2 11 nC
Qg(4.5V) 3.5 5 nC
Q

gs

Q

gd

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=10V, VDS=15V, ID=7.5A

1.3 nC

1.7 nC

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev4: April. 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

is the sum of the thermal impedence from junction to lead R

θJA

VGS=10V, VDS=15V, RL=2Ω,
R

=3Ω

GEN

IF=7.5A, dI/dt=100A/µs
IF=7.5A, dI/dt=100A/µs

and lead to ambient.

θJL

2.7 4.5 ns

14.9 23 ns

2.9 5.5 ns

10.5 12.6

ns

4.5 5.4 nC

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO6402A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10.5

12.6

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

VGS=10V

60

10V

50

40

30

(A)

D

I

20

10

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics

45
40
35

Ω

Ω)

Ω

Ω

30

(m

25

DS(ON)

R

20
15
10

10

0 5 10 15 20

Figure 3: On-Resistance vs. Drain Current and

6V

VGS=3.5V

VDS(Volts)

VGS=4.5V

VGS=10V

ID(A)

Gate Voltage

4.5V

15

125°C

VGS=10V
Id=7.5A

VDS=5V

125°C

VGS(Volts)

Temperature (°C)

25°C

25°

67
41

1.2 1.8

VGS=4.5V
Id=5.6A

4.5 5.4

12

9

(A)

D

I

6

3

0

1.8

1.6

1.4

1.2

1

0.8

Normalized On-Resistance

0.6

0.6

VDS=5V

1.5 2 2.5 3 3.5 4 4.5

Figure 2: Transfer Characteristics

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

11

5

4.5
23

5.5

60

50

40

Ω

Ω)

Ω

Ω

(m

30

DS(ON)

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

R

20

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

10

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

25°C

VGS(Volts)

ID=7.5A

125°C

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0

VSD(Volts)

Figure 6: Body-Diode Characteristics