Alpha & Omega AO 6401 Service Manual
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p
AO6401
A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6401 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6401 is Pb-free
(meets ROHS & Sony 259 specifications). AO6401L
, low gate charge and
DS(ON)
Features
VDS (V) = -30V
I
= -5 A (VGS = -10V)
D
R
R
R
< 49mΩ (VGS = -10V)
DS(ON)
< 64mΩ (VGS = -4.5V)
DS(ON)
< 119mΩ (VGS = -2.5V)
DS(ON)
is a Green Product ordering option. AO6401 and
O6401L are electrically identical.
D
TSOP6
Top View
1
D
D
G
Absolute Maximum Ratings T
Drain-Source Voltage -30
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
A
B
A
Junction and Storage Temperature Range
6
2
5
3
4
=25°C
T
A
=70°C
T
A
TA=25°C
=70°C
T
A
D
D
S
=25°C unless otherwise noted
A
G
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
S
Maximum UnitsParameter
-5
-4.2
-30
2
1.44
-55 to 150
V
V±12Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
47.5 62.5
74 110
37 50
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6401
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
V
V
Gate Threshold Voltage V
On state drain current
V
V
Static Drain-Source On-Resistance
V
V
Forward Transconductance
Diode Forward Voltage
V
I
Maximum Body-Diode Continuous Current
=-250µA, VGS=0V
D
=-24V, VGS=0V
DS
=0V, VGS=±12V
DS
DS=VGS ID
=-4.5V, VDS=-5V
GS
=-10V, ID=-5A
GS
=-4.5V, ID=-4A
GS
=-2.5V, ID=-1A
GS
=-5V, ID=-5A
DS
=-1A,VGS=0V
S
=-250µA
=55°C
T
J
=125°C
T
J
-30 V
-1
-5
µA
±100 nA
-0.7 -1 -1.3 V
-25 A
42 49
74
53 64
81 119
mΩ
m
m
Ω
Ω
711 S
-0.75 -1 V
-3 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
Output Capacitance
=0V, VDS=-15V, f=1MHz
GS
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
943 pF
108 pF
73 pF
6 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
=-4.5V, VDS=-15V, ID=-5A
V
GS
Turn-On DelayTime
=-10V, VDS=-15V, RL=3Ω,
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=6Ω
R
GEN
Turn-Off Fall Time
=-5A, dI/dt=100A/µs
I
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
F
=-5A, dI/dt=100A/µs
I
F
9.5 nC
2.1 nC
2.9 nC
6ns
3ns
40 ns
11 ns
21.2
ns
12.8 nC
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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