Alpha & Omega AO4914 Schematic [ru]

30V Dual N-Channel MOSFET with Schottky Diode

SCHOTTKY

S

1

Symbol

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

Pin1

General Description Product Summary

AO4914

The AO4914 uses advanced trench technology to provide
excellent R

and low gate charge. The two MOSFETs

DS(ON)

make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
Schottky diode is co-packaged in parallel with the
synchronous MOSFET to boost efficiency further.

SOIC-8

SOIC-8

Top View Bottom View

Top View Bottom View

S1/A

S1/A

G1

G1
S2

S2
G2

G2

Q1(N-Channel) Q2(N-Channel)

VDS= 30V 30V
ID= 8A (VGS=10V) 8A (VGS=10V)
R
R

<20.5mΩ R

DS(ON)

<28mΩ R

DS(ON)

DS(ON)
DS(ON)

ESD Protected ESD Protected

100% UIS Tested 100% UIS Tested

100% Rg Tested 100% Rg Tested

VDS = 30V, IF = 3A, VF<0.5V@1A

D1

Top View

Top View

D1/K

D1/K
D1/K

D1/K

D2

D2

D2

D2

G1

G1

D1

S1

K

K

A

A

<20.5mΩ (VGS=10V)
<28mΩ (VGS=4.5V)

D2

D2

G2

G2

S2

A

Max Q1

Drain-Source Voltage 30
Gate-Source Voltage

Continuous Drain
Current

Pulsed Drain Current
Avalanche Current

TA=25°C
TA=70°C

C

C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

Parameter Units

Reverse Voltage V
Continuous Forward

Current
Pulsed Diode Forward Current

TA=25°C
TA=70°C

C

TA=25°C

B

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

IAS, I
EAS, E

P

D

TJ, T

V

DS

I

F

I

FM

P

D

TJ, T

AR

STG

STG

8

6.5
40
19

AR

18

2

1.3

-55 to 150

Max Schottky

1.28Power Dissipation

30

2.2
20

Max Q2

30

±20

UnitsParameter

V
V±20

8

6.5

A
40
19
18

2

1.3

A

mJAvalanche energy L=0.1mH

W
°C

3

A

2

W

www.aosmd.com Page 1 of 9

AO4914

Thermal Characteristics - MOSFET
Parameter Typ Max Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

A
A D

t ≤ 10s
Steady-State
Steady-State

Thermal Characteristics - Schottky
Parameter Typ Max Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R

θJA

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

is the sum of the thermal impedence from junction to lead R

A
A D

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

t ≤ 10s
Steady-State
Steady-State

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

Symbol

R

θJA

R

θJL

48
74 90

32

62.5 °C/W

40

Symbol

R

θJA

R

θJL

=150°C. Ratings are based on low frequency and duty cycles to keep

and lead to ambient.

θJL

48 62.5 °C/W
74 90

32 40

°C/W
°C/W

°C/W
°C/W

Rev 11: Mar. 2011 www.aosmd.com Page 2 of 9

t5ns

Turn-On DelayTime

t

D(on)

5

ns

Turn-On DelayTime

AO4914

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current (Set
by Schottky leakage)

Gate-Body leakage current
Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current

ID=250uA, VGS=0V

30 V
VR=30V 0.05
VR=30V, TJ=125°C 10
VR=30V, TJ=150°C 20
VDS=0V,VGS=±16V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A

1.2 1.8 2.4 V
40 A

17 20.5

10 µA

TJ=125°C 23.5 29
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V

20.5 28 mΩ
30 S

0.45 0.5 V

3 A

mA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

575 730 865 pF
115 165 215 pF

50 82 120 pF

0.5 1.1 1.7 Ω

SWITCHING PARAMETERS

Qg(10V) 12 15 18 nC
Qg(4.5V) 6 7.5 9 nC
Q

gs

Q

gd

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=10V, VDS=15V, ID=8A

2.5 nC
3 nC

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of T

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

VGS=10V, VDS=15V, RL=1.8Ω,
R

=3Ω

GEN

IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

3.5 ns

19 ns

3.5 ns
8

ns

8 nC

Rev 11: Mar. 2011 www.aosmd.com Page 3 of 9