Alpha & Omega AO4712 Schematic [ru]

General Description Product Summary

V

Symbol

V

V

Absolute Maximum Ratings T

=25°C unless otherwise noted

Drain-Source Voltage

30

SRFET

TM

D

D

S

S

V

DS

A D

V

Drain-Source Voltage

30

A

AO4712

30V N-Channel MOSFET

SRFETTM AO4712 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R

,and low gate charge. This device is

DS(ON)

suitable for use as a low side FET in SMPS, load
switching and general purpose applications.

DS

ID (at VGS=10V) 13A
R
R

(at VGS=10V) < 11mΩ

DS(ON)

(at VGS = 4.5V) < 14mΩ

DS(ON)

30V

100% UIS Tested
100% Rg Tested

SOIC-8

Top View Bottom View

D

D

S

A

G

G

D

SRFET
Soft Recovery MOSFET:

Integrated Schottky Diode

S

TM

Maximum UnitsParameter

V

GS

C

B

TA=25°C
TA=70°C

C

TA=25°C
TA=70°C

I

D

I

DM

IAS, I

C

EAS, E
P

D

TJ, T

AR

AR

STG

Continuous Drain
Current

Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH

Power Dissipation
Junction and Storage Temperature Range -55 to 150 °C

13
10
68

11

3.1

mJ

2

V±12Gate-Source Voltage

A

A15

W

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

32
60
17

40
75
24

UnitsParameter Typ Max

°C/W
°C/W
°C/W

www.aosmd.com Page 1 of 6

tr2.4

ns

Turn-On Rise Time

VGS=10V, V

=15V, R

=1.2Ω,

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO4712

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=1mA, VGS=0V

30 V

VDS=30V, VGS=0V 0.5

TJ=125°C 100
VDS=0V, VGS= ±12V
VDS=V

GS， ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=13A

1.1 1.65 2.1 V
68 A

100 nA

9 11

TJ=125°C 13 16
VGS=4.5V, ID=11A
VDS=5V, ID=13A
IS=1A,VGS=0V

10.7 14 mΩ
80 S

0.4 0.7 V
5 A

mA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

930 1170 1400 pF

90 128 170 pF
45 89 125 pF

0.7 1.4 2.1 Ω

SWITCHING PARAMETERS

Qg(10V) 16 20 24 nC
Qg(4.5V) 7 8.7 10.5 nC
Q

gs

Q

gd

t

D(on)

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedance from junction to lead R

θJA

J(MAX)

VGS=10V, VDS=15V, ID=13A

3.2 nC

3 nC
6 ns

DS

R

=3Ω

GEN

L

23 ns

4 ns
IF=13A, dI/dt=500A/µs
IF=13A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

5.5 7 8.5 ns
5 6.5 8

nC

Rev 8: December 2011 www.aosmd.com Page 2 of 6

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

(Note E)

AO4712

35

10V

30

25

20

(A)

D

I

15

10

5

0

13

12

11

Ω

Ω)

Ω

Ω

(m

10

DS(ON)

R

9

8

7

3V

VGS=2.25V

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

1 6 11 16 21 26

Figure 3: On-Resistance vs. Drain Current and Gate

VDS(Volts)

VGS=4.5V

VGS=10V

ID(A)

Voltage (Note E)

2.75V

2.5V

35

30

25

20

(A)

D

I

15

10

5

0

1.5 2 2.5 3

Figure 2: Transfer Characteristics (Note E)

2

1.8

1.6

1.4

1.2

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175 200

VDS=5V

125°C

25°C

VGS(Volts)

VGS=10V
ID=13A

VGS=4.5V
ID=11A

Figure 4: On-Resistance vs. Junction Temperature

Temperature (°C)

17

5
2

10

0

18

25

20

15

Ω

Ω)

Ω

Ω

(m

10

DS(ON)

R

5

0

2 4 6 8 10

25°C

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS(Volts)

(Note E)

125°C

ID=13A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

40

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

VSD(Volts)

Rev 8: December 2011 www.aosmd.com Page 3 of 6