Alpha & Omega AO4496L Schematic [ru]
AO4496
Symbol
Parameter
Symbol
Typ
Max
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
A
D
General Description
The AO4496 uses advanced trench technology to
provide excellent R
device is suitable for use as a DC-DC converter
application.
Top View Bottom View
D
D
D
with low gate charge. This
DS(ON)
SOIC-8
G
S
S
S
Product Summary
VDS(V) = 30V
ID= 10A (VGS= 10V)
R
R
100% UIS Tested
100% Rg Tested
< 19.5mΩ (VGS= 10V)
DS(ON)
< 26mΩ (VGS= 4.5V)
DS(ON)
G
D
S
J
Maximum
Drain-Source Voltage 30
Gate-Source Voltage
G
A
TA=25°C
TA=70°C
B
G
TA=25°C
TA=70°C
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
TJ, T
±20
10
7.5
50
17
14
3.1
2.0
STG
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady State
Steady State
R
θJA
R
θJL
31 40
59 75
16 24
UnitsParameter
V
V
A
mJ
W
°C-55 to 150
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4496
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID = 250µA, V
V
= 30V, V
DS
V
= 0V, V
DS
V
= V
DS
GS ID
V
= 10V, V
GS
V
= 10V, ID = 10A
GS
V
= 4.5V, ID = 7.5A
GS
V
= 5V, ID = 10A
DS
IS = 1A,V
GS
GS
= 0V
= 0V
GS
= 0V
GS
= ±20V
= 250µA
= 5V
DS
30 V
TJ = 55°C 5
±100
1.4 1.8 2.5 V
50 A
16 19.5
TJ=125°C 24 29
21 26
30 S
0.76 1 V
1
µA
nA
mΩ
3 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Q
(10V) 9.8 13 nC
g
Qg (4.5V) 4.6 6.1 nC
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EARand IARratings are based on low frequency and duty cycles to keep Tj=25C.
Rev5: Nov. 2010
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
θJA
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
VGS=10V, VDS=15V, RL= 1.5Ω,
R
=3Ω
GEN
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
and lead to ambient.
θJL
550 715 pF
110 pF
55 pF
3 4 4.9 Ω
1.8 nC
2.2 nC
5 ns
3.2 ns
24 ns
6 ns
22 29
ns
14 nC
0
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
DS(ON)
Normalized On
50
10V
4.5V
40
30
(A)
D
I
20
10
VGS= 3V
0
0 1 2 3 4 5
VDS(Volts)
Figure 1: On-Region Characteristics
26
24
22
Ω
Ω)
Ω
Ω
VGS= 4.5V
(m
R
18
VGS= 10V
16
4V
3.5V
50
VDS= 5V
40
30
(A)
D
I
20
125°C
10
25°C
0
1 2 3 4 5
VGS(Volts)
Figure 2: Transfer Characteristics
1.8
VGS= 10V
1.6
1.4
-Resistance
ID= 10A
1.2
1.0
VGS= 4.5V
ID= 7.5A
14
I
=-6.5A, dI/dt=100A/µs
0 5 10 15 20 25 30
F
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
45
40
35
Ω
Ω)
Ω
Ω
(m
30
25
DS(ON)
R
20
125°C
25°C
15
10
2 4 6 8 10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
ID= 10A
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
1E+00
1E-01
(A)
1E-02
S
I
125°C
1E-03
1E-04
25°C
1E-05
1E-06
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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