Alpha & Omega AO4466L Schematic [ru]

AO4466

S

Symbol

Symbol

Typ

Max

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

A

S

30V N-Channel MOSFET

General Description

The AO4466 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.

* RoHS and Halogen-Free Compliant

Top View Bottom View

D

D

D

D

and low gate charge. This

DS(ON)

SOIC-8

G

S

S

Product Summary

VDS(V) = 30V
ID= 10A (VGS= 10V)
R
R

100% UIS Tested
100% Rg Tested

< 23mΩ (VGS= 10V)

DS(ON)

< 35mΩ (VGS= 4.5V)

DS(ON)

G

D

S

A

Maximum UnitsParameter

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current

AF

Pulsed Drain Current

TA=25°C
TA=70°C

B

TA=25°C
Power Dissipation
Avalanche Current
Repetitive avalanche energy 0.1mH

TA=70°C

B, G

B, G

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

P

D

I

AR

E

AR

TJ, T

STG

30

±20

10

7

64

3.1
2

12

7

-55 to 150

V
V

A

W

A

mJ

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

t ≤ 10s
Steady-State
Steady-State

R

θJA

R

θJL

36 40
62 75
18 24

°C/W
°C/W
°C/W

Rev.10.0: July 2013

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Page 1 of 6

t

4.3

ns

Turn-On DelayTime

Electrical Characteristics (TJ=25°C unless otherwise noted)

t

D(on)

4.3

ns

Turn-On DelayTime

AO4466

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V
VDS=30 VGS=0V

VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=10A

VGS=4.5V, ID=5A
VDS=5V, ID=10A
IS=1A,VGS=0V

30 V

TJ=55°C 5

100 nA

1.5 2.1 2.6 V
64 A

16.7 23

TJ=125°C 24.3 30

23.7 35 mΩ
17 S

0.75 1 V

2.4 A

1

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

298 373 448 pF

46 67 88 pF
24 41 58 pF

0.6 1.8 2.8 Ω

SWITCHING PARAMETERS

Qg(10V) 5.7 7.1 8.6 nC
Qg(4.5V) 2.7 3.5 4.2 nC
Q

gs

Q

gd

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=10V, VDS=15V, ID=10A

1.2 nC

1.6 nC

t

r

t

D(off)

t

f

t

rr

Q

rr

t

rr

Q

rr

A: The value of R
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev 9: May. 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

θJA

is the sum of the thermal impedence from junction to lead R

θJA

VGS=10V, VDS=15V, RL=1.5Ω,
R

=3Ω

GEN

IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs

and lead to ambient.

θJL

2.8 ns

15.8 ns
3 ns

8.4 10.5 12.6

ns

3.6 4.5 5.4 nC

4.7 6.0 7.2

ns

5.3 6.6 8 nC

Rev.10.0: July 2013

Rev.10.0: July 2013

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Page 2 of 6

Page 2 of 6

AO4466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

05101520

V

=4.5V

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

25°C

60

10V

50

40

30

(A)

D

I

20

10

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics

40

35

30

Ω

Ω)

Ω

Ω

(m

25

DS(ON)

R

20

15

6V

VGS=3.5V

VDS(Volts)

VGS=10V

4.5V

15

12

9

(A)

D

I

6

3

0

1.5 2 2.5 3 3.5 4 4.5

Figure 2: Transfer Characteristics

1.8

1.6

1.4

1.2

1

Normalized On-Resistance

VDS=5V

125°C

25°C

VGS(Volts)

VGS=10V

VGS=4.5V

10

10

0 5 10 15 20

Figure 3: On-Resistance vs. Drain Current and

60

50

40

Ω

Ω)

Ω

Ω

(m

30

DS(ON)

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

R

20

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

10

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

ID(A)

Gate Voltage

ID=10A

125°C

VGS(Volts)

0.8

0.8
0 25 50 75 100 125 150 175

Temperature (°C)

125°C

25°C

VSD(Volts)

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

1.0E-04

1.0E-05

Figure 4: On-Resistance vs. Junction Temperature

0.0 0.2 0.4 0.6 0.8 1.0

Figure 6: Body-Diode Characteristics

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