Alpha & Omega AO4459L Schematic [ru]
General Description Product Summary
V
Symbol
V
V
Absolute Maximum Ratings T
=25°C unless otherwise noted
Drain-Source Voltage
-30
D
S
V
DS
A D
V
Drain-Source Voltage
-30
A
D
S
S
AO4459
30V P-Channel MOSFET
The AO4459 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
. This device is ideal for load switch
DS(ON)
and battery protection applications.
DS
ID (at VGS=-10V) -6.5A
R
R
(at VGS=-10V) < 46mΩ
DS(ON)
(at VGS = -4.5V) < 72mΩ
DS(ON)
-30V
100% UIS Tested
100% Rg Tested
SOIC-8
SOIC-8
Top View Bottom View
Top View Bottom View
D
D
D
D
D
D
S
S
S
G
G
G
A
G
D
D
S
S
Maximum UnitsParameter
V
GS
C
B
TA=25°C
TA=70°C
C
TA=25°C
TA=70°C
I
D
I
DM
IAS, I
C
EAS, E
P
D
TJ, T
AR
AR
STG
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range -55 to 150 °C
-6.5
-5.3
-30
14
3.1
2
mJ
V±20Gate-Source Voltage
A
A17
W
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJL
31
59
16
40
75
24
UnitsParameter Typ Max
°C/W
°C/W
°C/W
www.aosmd.com Page 1 of 6
tr5.5
ns
Turn-On Rise Time
Electrical Characteristics (TJ=25°C unless otherwise noted)
AO4459
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=-250µA, VGS=0V
-30 V
VDS=-30V, VGS=0V -1
TJ=55°C -5
VDS=0V, VGS= ±20V
VDS=V
GS ID
=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6.5A
-1.4 -1.9 -2.4 V
-30 A
±100 nA
33 46
TJ=125°C 50 68
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-6.5A
IS=-1A,VGS=0V
53 72 mΩ
14 S
-0.8 -1 V
-3.5 A
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3.5 7.5 11.5 Ω
520 pF
100 pF
65 pF
SWITCHING PARAMETERS
Qg(10V) 9.2 11 nC
Qg(4.5V) 4.6 6 nC
Q
gs
Q
gd
t
D(on)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=-10V, VDS=-15V, ID=-6.5A
1.6 nC
2.2 nC
7.5 ns
VGS=-10V, VDS=-15V, RL=2.5Ω,
R
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
θJA
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
J(MAX)
is the sum of the thermal impedence from junction to lead R
θJA
GEN
=3Ω
19 ns
7 ns
IF=-6.5A, dI/dt=100A/µs
IF=-6.5A, dI/dt=100A/µs
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and lead to ambient.
θJL
=150°C. The SOA curve provides a single pulse rating.
J(MAX)
11 ns
5.3
nC
Rev 2: Nov 2011 www.aosmd.com Page 2 of 6
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
125°C
-
6V
-
8V
25°C
125°C
125°C
-
6V
-
8V
40
40
-10V
-10V
35
35
30
30
25
25
VGS=-4.5V
=-10V
=-10V
VGS=-4.5V
VGS=-3.5V
VGS=-3.5V
(A)
(A)
20
20
D
D
-I
-I
15
15
10
10
5
5
0
0
0 1 2 3 4 5
0 1 2 3 4 5
-VDS(Volts)
Fig 1: On-Region Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
80
80
70
70
60
60
Ω
Ω)
Ω
Ω)
Ω
Ω
Ω
Ω
50
50
(m
(m
40
40
DS(ON)
DS(ON)
R
R
30
30
20
20
10
10
0 2 4 6 8 10
0 2 4 6 8 10
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 3: On-Resistance vs. Drain Current and Gate
-VDS(Volts)
VGS=-4.5V
VGS=-4.5V
V
V
-ID(A)
-ID(A)
Voltage (Note E)
Voltage (Note E)
-5V
-5V
-4V
-4V
30
30
VDS=-5V
VDS=-5V
25
25
20
20
(A)
(A)
15
15
D
D
-I
-I
10
10
25°C
25°C
5
5
0
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
-VGS(Volts)
VGS=-10V
VGS=-10V
ID=-6.5A
ID=-6.5A
17
VGS=-4.5V
VGS=-4.5V
ID=-5A
ID=-5A
10
1
1
Normalized On-Resistance
Normalized On-Resistance
0.8
0.8
0 25 50 75 100 125 150 175
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 4: On-Resistance vs. Junction Temperature
Temperature (°C)
(Note E)
(Note E)
18
AO4459
5
2
0
120
100
80
Ω
Ω)
Ω
Ω
(m
60
DS(ON)
R
40
20
2 4 6 8 10
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
-VGS(Volts)
(Note E)
ID=-6.5A
1.0E+02
1.0E+01
1.0E+00
1.0E-01
(A)
S
-I
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
125°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6: Body-Diode Characteristics (Note E)
-VSD(Volts)
Rev 2: Nov 2011 www.aosmd.com Page 3 of 6
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