Alpha & Omega AO4430L Schematic [ru]

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

AO4430

D

D

D

S

S

G

Symbol

Typ

Max

A

B

B

B

A

30V N-Channel MOSFET

General Description

The AO4430 uses advanced trench technology to provide
excellent R
characteristics and ultra-low gate resistance. This device is
ideally suited for use as a low side switch in Notebook CPU
core power conversion.

RoHS and Halogen-Free Compliant

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current

AF

Pulsed Drain Current

Power Dissipation

Avalanche Current

Repetitive avalanche energy 0.3mH

Junction and Storage Temperature Range

, shoot-through immunity, body diode

DS(ON)

SOIC-8

Top View Bottom View

A

TA=25°C

TA=70°C

TA=25°C

TA=70°C

V

DS

V

GS

I

D

I

DM

P

D

I

AR

E

AR

TJ, T

STG

Product Summary

VDS(V) = 30V
ID= 18A (VGS= 10V)
R

< 5.5mΩ (V

DS(ON)

R

< 7.5mΩ (V

DS(ON)

100% UIS Tested
100% Rg Tested

Maximum UnitsParameter

30

18

15

80

2.1

30

135

-55 to 150

= 10V)

GS

= 4.5V)

GS

G

3

D

S

V

V±20

A

W

A

mJ

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Rev.6.0: May 2015 www.aosmd.com Page 1 of 5

t ≤ 10s

Steady-State

C

Steady-State

R

θJA

R

θJL

31 40
59 75
16 24

°C/W
°C/W
°C/W

Electrical Characteristics (TJ=25°C unless otherwise noted)

Qgd15

nC

Gate Drain Charge

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

=250µA, V

D

VDS=30V, VGS=0V

VDS=0V, VGS= ±20V

VDS=V

GS ID

VGS=4.5V, VDS=5V

VGS=10V, ID=18A

VGS=4.5V, ID=15A

VDS=5V, ID=18A

IS=1A,VGS=0V

=0V

GS

=250µA

30 V

TJ=55°C 5

100 nA

1 1.8 2.5 V

80 A

4.7 5.5

TJ=125°C 6.5 8

6.2 7.5 mΩ

82 S

0.7 1 V

4.5 A

1

µA

mΩ

I

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

4660 6060 7270 pF

425 638 960 pF

240 355 530 pF

0.2 0.45 0.9 Ω

SWITCHING PARAMETERS

Qg(10V) 80 103 124 nC

Qg(4.5V) 37 48 58 nC

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Total Gate Charge

Total Gate Charge

Gate Source Charge

VGS=10V, VDS=15V, ID=18A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, R
R

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

θJA

is the sum of the thermal impedence from junction to lead R

θJA

I

I

=3Ω

GEN

=18A, dI/dt=100A/µs

F

=18A, dI/dt=100A/µs

F

and lead to ambient.

θJL

=0.83Ω,

L

18 nC

15 nC

12 16 ns

8 12 ns

51.5 70 ns

8.8 14 ns

33.5

22

44 ns

30

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.6.0: May 2015

Rev.6.0: May 2015

www.aosmd.com

www.aosmd.com

Page 2 of 5

Page 2 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

3.0V

3.5V

3.5

0.8

4.0

Normalized On

50

10V

4.5V

60

50

VDS=5V

40

30

(A)

D

I

20

10

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics

7.0

6.5

6.0

)

Ω

5.5

(m

5.0

DS(ON)

R

4.5

4.0

3.5
0 20 40 60 80 100

V

Figure 3: On-Resistance vs. Drain Current and

VGS=2.5V

VDS(Volts)

=4.5V

V

ID(A)

Gate Voltage

=10V

40

125°C

30

(A)

D

I

20

10

0

1 1.5 2 2.5 3 3.5

ID=18A

VGS(Volts)

VGS=4.5V

VGS=10V

Temperature (°C)

Figure 2: Transfer Characteristics

1.6

1.4

1.2

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

25°C

16

12

)

Ω

(m

8

DS(ON)

R

4

0

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

Rev.6.0: May 2015

Rev.6.0: May 2015

ID=18A

VGS(Volts)

125°C

25°C

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www.aosmd.com

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

0.0 0.2 0.4 0.6 0.8 1.0

VSD(Volts)

Figure 6: Body-Diode Characteristics

25°C

Page 3 of 5

Page 3 of 5