Alpha & Omega AO3423L Schematic [ru]

General Description Product Summary

VDS-20V

Typical ESD protection

HBM Class 2

Symbol

V

Drain-Source Voltage

-20

V

Absolute Maximum Ratings T

=25°C unless otherwise noted

V

DS

A

Drain-Source Voltage

-20

V

A D

The AO3423 uses advanced trench technology to provide
excellent R
voltages as low as 2.5V. This device is suitable for use as
a load switch applications.

, low gate charge and operation with gate

DS(ON)

ID (at VGS=-10V) -2A
R
R
R

(at VGS= -10V) < 92mΩ

DS(ON)

(at VGS= -4.5V) < 118mΩ

DS(ON)

(at VGS= -2.5V) < 166mΩ

DS(ON)

AO3423

20V P-Channel MOSFET

Top View Bottom View

D

SOT23

D

S

G

A

G

S

G

Maximum UnitsParameter

V

GS

Continuous Drain
Current

Pulsed Drain Current

TA=25°C
TA=70°C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

I

D

I

DM

P

D

TJ, T

STG

-2

-2

-17

1.4

0.9

-55 to 150 °C

Thermal Characteristics
Parameter Typ Max

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

65
85
43

90

125

60

D

S

V±12Gate-Source Voltage

A

W

Units

°C/W
°C/W
°C/W

www.aosmd.com Page 1 of 5

tr5.5

ns

Turn-On Rise Time

VGS=-10V, V

=-10V, R

=5Ω,

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3423

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=-250µA, VGS=0V

-20 V

VDS=-20V, VGS=0V -1

TJ=55°C -5
VDS=0V, VGS= ±12V
VDS=VGS, ID=-250µΑ
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-2A

-0.5 -0.85 -1.2 V

-17 A

±10 µA

76 92

TJ=125°C 99 119
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
VDS=-5V, ID=-2A
IS=-1A,VGS=0V

94 118 mΩ

128 166 mΩ

6.8 S

-0.76 -1 V

-1.5 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

250 325 400 pF

40 63 85 pF
22 37 52 pF

11.2 17 Ω

SWITCHING PARAMETERS

Q

g

Q

gs

Q

gd

t

D(on)

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedance from junction to lead R

θJA

J(MAX)

3.2

VGS=-4.5V, VDS=-10V, ID=-2A

0.6

0.9
11

DS

R

=3Ω

GEN

IF=-2A, dI/dt=100A/µs
IF=-2A, dI/dt=100A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

L

22

6.1

1.4 nC

8

4.5 nC
nC
nC

ns

ns
ns

ns

Rev 5: Nov 2011 www.aosmd.com Page 2 of 5

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-

4V

Voltage (Note E)

25°C

125°C

(Note E)

AO3423

25

-6V

-8V

20

-5V

15

(A)

D

-I

10

5

0

VGS=-1.5V

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

-VDS(Volts)

180

160

VGS=-2.5V

140

Ω

Ω)

Ω

Ω

120

(m

100

DS(ON)

R

VGS=-4.5V

80

60

VGS=-10V

40

0 2 4 6 8 10

Figure 3: On-Resistance vs. Drain Current and Gate

-ID(A)

-2.5V

-2V

-3.5V

-3V

10

VDS=-5V

8

6

(A)

D

-I

4

2

125°C

25°C

0

0 1 2 3 4

Figure 2: Transfer Characteristics (Note E)

-VGS(Volts)

1.6

ID=-2A, VGS=-4.5V

1.4
ID=-2A, VGS=-10V

1.2

ID=-1A, VGS=-2.5V

1.0

Normalized On-Resistance

0.8

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Temperature (°C)

200
180
160
140

Ω

Ω)

Ω

Ω

(m

120

DS(ON)

100

R

80

25°C

60
40

0 2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

-VGS(Volts)
(Note E)

125°C

ID=-2A

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

-I

1.0E-03

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

-VSD(Volts)

Rev 5: Nov 2011 www.aosmd.com Page 3 of 5