Alpha & Omega AO3420 Schematic [ru]

General Description Product Summary

V

Absolute Maximum Ratings T

=25°C unless otherwise noted

Symbol

A

A D

Maximum

Units

Parameter

AO3420

20V N-Channel MOSFET

The AO3420 uses advanced trench technology to provide
excellent R
voltages as low as 1.8V while retaining a 12V V

, low gate charge and operation with gate

DS(ON)

GS(MAX)

rating. This device is suitable for use as a uni-directional
or bi-directional load switch.

Top View Bottom View

D

Drain-Source Voltage 20 V

Continuous Drain
Current

Pulsed Drain Current

TA=25°C
TA=70°C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150

SOT23

D

S

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

G

STG

S

G

A

DS

ID (at VGS=10V) 6A
R
R
R
R

(at VGS=10V) < 24mΩ

DS(ON)

(at VGS =4.5V) < 27mΩ

DS(ON)

(at VGS=2.5V) < 42mΩ

DS(ON)

(at VGS=1.8V) < 55mΩ

DS(ON)

D

G

S

6
5

30

1.4

0.9

20V

V±12Gate-Source Voltage

A

W
°C

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

70

100

63

90

125

80

UnitsParameter Typ Max

°C/W
°C/W
°C/W

www.aosmd.com Page 1 of 5

t

3

ns

Turn-On DelayTime

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3420

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

20 V

VDS=20V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS= ±12V
VDS=V

GS ID

=250µA

VGS=10V, ID=6A

0.4 0.75 1.1 V

±100 nA

16 24

TJ=125°C 23 35
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
VDS=5V, ID=6A
IS=1A,VGS=0V

18 27 mΩ
23 42 mΩ
31 55 mΩ
25 S

0.7 1 V

µA

mΩ

2 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

420 525 630 pF

65 95 125 pF
45 75 105 pF

0.8 1.7 2.6 Ω

SWITCHING PARAMETERS

Qg(10V) 12.5 nC
Qg(4.5V) 6 nC
Q

gs

Q

gd

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge

Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

J(MAX)

VGS=10V, VDS=10V, ID=6A

1 nC
2 nC

VGS=10V, VDS=10V, RL=1.7Ω,
R

=3Ω

GEN

7.5 ns
20 ns

6 ns
IF=6A, dI/dt=100A/µs
IF=6A, dI/dt=100A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

14 ns

6

nC

Rev.2. 0: August 2013 www.aosmd.com Page 2 of 5

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

V

=1.8V

125°C

(Note E)

AO3420

40

10V

30

20

(A)

D

I

10

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

60
55
50
45

Ω

Ω)

Ω

Ω

40

(m

35
30

DS(ON)

R

25
20
15
10

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and Gate

3.5V

4.5V

VGS=3.5V

VDS(Volts)

VGS=2.5V

VGS=4.5V

VGS=10V

ID(A)

Voltage (Note E)

2.5V

1.8V

20

VDS=5V

15

10

(A)

D

I

5

0

0 0.5 1 1.5 2 2.5

Figure 2: Transfer Characteristics (Note E)

1.8

1.6

1.4

1.2

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175

125°C

25°C

VGS(Volts)

VGS=4.5V

VGS=2.5V
ID=4A

Figure 4: On-Resistance vs. Junction Temperature

ID=5A

VGS=10V
ID=6A

Temperature (°C)

17

VGS=1.8V

5

ID=2A

2

10

0

18

45

40

35

Ω

Ω)

Ω

Ω

(m

30

DS(ON)

R

25

20

25°C

15

0 2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

125°C

VGS(Volts)

(Note E)

ID=6A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

VSD(Volts)

Rev.2. 0: August 2013 www.aosmd.com Page 3 of 5