Alpha & Omega AO3415 Schematic [ru]

General Description Product Summary

-20V

Symbol

VV-20

Absolute Maximum Ratings T

=25°C unless otherwise noted

Drain-Source Voltage

V

D

G

S

V

DS

V

-20

Drain-Source Voltage

A D

A

AO3415

20V P-Channel MOSFET

The AO3415 uses advanced trench technology to provide
excellent R

, low gate charge and operation with gate

DS(ON)

voltages as low as 1.8V. This device is suitable for use as
a load switch applications.

A

SOT23

V

GS

I

D

I

DM

P

D

TJ, T

Top View Bottom View

Continuous Drain
Current

TA=25°C
TA=70°C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

DS

ID (at VGS=-4.5V) -4A
R
R
R

(at VGS= -4.5V) < 41mΩ

DS(ON)

(at VGS= -2.5V) < 53mΩ

DS(ON)

(at VGS= -1.8V) < 65mΩ

DS(ON)

ESD protected

G

±8Gate-Source Voltage

-4

-3.5

-30Pulsed Drain Current

1.5
1

STG

-55 to 150

D

S

UnitsMaximumParameter

V

A

W
°C

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

Parameter Typ

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

65
85
43 52

www.aosmd.com Page 1 of 5

Max

80

Units

°C/W
°C/W100
°C/W

t

13

ns

Turn-On DelayTime

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3415

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=-250µA, VGS=0V

-20 V

VDS=-20V, VGS=0V -1

TJ=55°C -5
VDS=0V, VGS= ±8V
VDS=VGS, ID=-250µΑ
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-4A

-0.3 -0.57 -0.9 V

-30 A

±10 µA

34 41

TJ=125°C 49 59
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
VGS=-1.5V, ID=-1A
VDS=-5V, ID=-4A
IS=-1A,VGS=0V

42 53 mΩ
52 65 mΩ
61 mΩ
20 S

-0.64 -1 V

µA

mΩ

-2 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

600 751 905 pF

80 115 150 pF
48 80 115 pF

6 13 20 Ω

SWITCHING PARAMETERS

Q

g

Q

gs

Q

gd

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Total Gate Charge
Gate Source Charge
Gate Drain Charge

Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedance from junction to lead R

θJA

J(MAX)

VGS=-4.5V, VDS=-10V, ID=-4A

VGS=-4.5V, VDS=-10V, RL=2.5Ω,
R

=3Ω

GEN

IF=-4A, dI/dt=500A/µs
IF=-4A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

7.4 9.3 11 nC

0.8 1 1.2 nC

1.3 2.2 3.1 nC

9 ns
19 ns
29 ns

20 26 32

ns

40 51 62 nC

Rev 7: Sep 2011 www.aosmd.com Page 2 of 5

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Voltage (Note E)

-

4.5V

-

8V

Voltage (Note E)

25°C

125°C

I=-

4A

AO3415

40
35
30
25
20

(A)

D

-I

15
10

5

VGS=-1.5V

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

-VDS(Volts)

100

VGS=-1.5V

80

Ω

Ω)

Ω

Ω

(m

60

DS(ON)

R

40

VGS=-1.8V

VGS=-2.5V

VGS=-4.5V

20

0 2 4 6 8 10

Figure 3: On-Resistance vs. Drain Current and Gate

-ID(A)

-3.0V

-2.5V

-2.0V

15

VDS=-5V

12

9

(A)

D

-I

6

3

125°C

25°C

0

0 0.5 1 1.5 2

Figure 2: Transfer Characteristics (Note E)

-VGS(Volts)

1.60
ID=-4A, VGS=-4.5V

1.40

ID=-4A, VGS=-2.5V

1.20

ID=-2A, VGS=-1.8V

1.00

Normalized On-Resistance

0.80

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Temperature (°C)

(Note E)

120

100

80

Ω

Ω)

Ω

Ω

(m

60

DS(ON)

R

125°C

40

20

25°C

0 2 4 6 8

Figure 5: On-Resistance vs. Gate-Source Voltage

-VGS(Volts)
(Note E)

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

-I

1.0E-03

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

-VSD(Volts)

Rev 7: Sep 2011 www.aosmd.com Page 3 of 5