Alpha & Omega AO3413L Schematic [ru]

AO3413

Symbol

Symbol

Typ

Max

B

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

20V P-Channel MOSFET

General Description

General Description

The AO3413 uses advanced trench technology to

The AO3413 uses advanced trench technology to
provide excellent R

provide excellent R
operation with gate voltages as low as 1.8V. This

operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM

device is suitable for use as a load switch or in PWM
applications.

applications.

Top View Bottom View

Top View Bottom View

D

D

G

, low gate charge and

, low gate charge and

DS(ON)

DS(ON)

SOT23

SOT23

D

D

S

S

G

G

S

Features

Features

VDS= -20V

VDS= -20V
ID= -3A (VGS= -4.5V)

ID= -3A (VGS= -4.5V)
R

R
R

R
R

R

< 80mΩ (VGS=- 4.5V)

< 80mΩ (VGS=- 4.5V)

DS(ON)

DS(ON)

< 100mΩ (VGS= -2.5V)

< 100mΩ (VGS= -2.5V)

DS(ON)

DS(ON)

< 130mΩ (VGS= -1.8V)

< 130mΩ (VGS= -1.8V)

DS(ON)

DS(ON)

G

G

D

D

S

S

-15

A

Drain-Source Voltage

Continuous Drain
Current

A

TA=25°C
TA=70°C

Pulsed Drain Current

TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

Thermal Characteristics
Parameter

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

t ≤ 10s
Steady-State
Steady-State

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

MaximumParameter Units

-20
±8

V
VGate-Source Voltage

-3

-2.4

A

-15

1.4

0.9

STG

W
°C-55 to 150

Units

R

θJA

R

θJL

70 90

100 125

63 80

°C/W
°C/W
°C/W

Rev 9: July 2010

www.aosmd.com

Page 1 of 5

t36ns

Turn-On Rise Time

V

=-4.5V, V

=-10V, R

=3.3Ω,

tr36

ns

Turn-On Rise Time

VGS=-4.5V, V

DS

=-10V, R

L

=3.3Ω,

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3413

Symbol Min Typ Max Units

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

Parameter Conditions

ID=-250µA, VGS=0V
VDS=-20V, VGS=0V

VDS=0V, VGS=±8V
VDS=V

GS ID

VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3A

VGS=-2.5V, ID=-2.6A
VGS=-1.8V, ID=-1A
VDS=-5V, ID=-3A
IS=-1A,VGS=0V

=-250µA

-20 V

-1

TJ=55°C -5

±100 nA

-0.4 -0.65 -1 V

-15 A
56 80

TJ=125°C 80 115

70 100 mΩ
85 130 mΩ
12 S

-0.7 -1 V

-1.4 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

560 745 pF

80 pF
70 pF
15 23 Ω

SWITCHING PARAMETERS

Q
Q
Q
t

D(on)

g
gs
gd

Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=-4.5V, VDS=-10V, ID=-3A

Turn-On DelayTime

8.5 11 nC

1.2 nC

2.1 nC

7.2 ns

R

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1 in2FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The

θJA

is the sum of the thermal impedence from junction to lead R

θJA

=6Ω

GEN

IF=-3A, dI/dt=100A/µs
IF=-3A, dI/dt=100A/µs

and lead to ambient.

θJL

12

53 ns
56 ns
37 49

27

ns

nC

Rev 9: July 2010

Rev 9: July 2010

www.aosmd.com

www.aosmd.com

Page 2 of 5

Page 2 of 5

-

2.5V

-

3.0V

-

2.5V

-

3.0V

125°C

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25

25

-4.5V

-4.5V

20

20

15

15

(A)

-2.0V

(A)

(A)

D

D

-I

-I

10

10

5

5

-2.0V

VGS=-1.5V

VGS=-1.5V

(A)

D

D

-I

-I

20

20

15

15

10

10

5

5

VDS=-5V

VDS=-5V

-15

125°C

125°C

25°C

25°C

AO3413

0

0

0 1 2 3 4 5

0 1 2 3 4 5

-VDS(Volts)

Figure 1: On-Region Characteristics

Figure 1: On-Region Characteristics

150

150

130

130

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

110

110

(m

(m

90

90

DS(ON)

DS(ON)

R

R

70

70

50

50

0 2 4 6 8 10

Figure 3: On-Resistance vs. Drain Current and

180
160
140

Ω

Ω)

Ω

Ω

120

(m

100

DS(ON)

R

80
60

25°C

40

0 2 4 6 8

Figure 5: On-Resistance vs. Gate-Source Voltage

-VDS(Volts)

VGS=-1.8V

VGS=-1.8V

-ID(A)

Gate Voltage

-VGS(Volts)

VGS=-2.5V

VGS=-2.5V

VGS=-4.5V

VGS=-4.5V

125°C

ID=-3A

0

0

0 0.5 1 1.5 2 2.5 3

0 0.5 1 1.5 2 2.5 3

-VGS(Volts)

Figure 2: Transfer Characteristics

Figure 2: Transfer Characteristics

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

1E+02

1E+01

12

1E+00

1E-01

(A)

S

-I

1E-02

1E-03

1E-04

1E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics

-VGS(Volts)

VGS=-2.5V

VGS=-2.5V
ID=-2.6A

ID=-2.6A

Temperature (°C)

25°C

-VSD(Volts)

VGS=-1.8V

VGS=-1.8V
ID=-1A

ID=-1A

VGS=-4.5V

VGS=-4.5V
ID=-3A

ID=-3A

Rev 9: July 2010

Rev 9: July 2010

www.aosmd.com

www.aosmd.com

Page 3 of 5

Page 3 of 5